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Mechanical Stress on the Nanoscale. Simulation, Material Systems and Characterization Techniques. Edition No. 1

  • ID: 2180394
  • Book
  • November 2011
  • 380 Pages
  • John Wiley and Sons Ltd
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques.
Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
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Part I
Fundamentals of stress and strain on the nanoscale

- Elastic strain relaxation: thermodynamics and kinetics
- Elasticity for nanoscale objects
- Onset of plasticity in crystalline nanomaterials
- Relaxations on the nanoscale: an atomistic view by numerical simulations

Part II
Model systems with stress-engineered properties

- Accommodation of lattice misfit in semiconductor heterostructure nanowires
- Strained Silicon Nanodevices
- Stress in heteroepitaxy as a tool to tailor magnetic nanostructures
- Self-organized Nanopatterning and Growth on Metallic Surfaces
- Semiconductor-templates for anisotropic fabrication of nano-objects

Part III
Characterisation techniques of measuring stresses on the nanoscale

- Advances and limits of transmission electron microscopy (TEM) for measuring strain at the nanoscale
- Determination of Elastic Strains using Electron Backscatter Diffraction in the Scanning Electron Microscope
- X-ray Diffraction analysis of elastic strains at the nanoscale
- Diffuse x-ray scattering at low-dimensional nanostructures
- Direct observation of elastic displacement modes by grazing-incidence X-ray diffraction
- Solar Silicon characterized by Raman Spectroscopy: From Micro- to Nanometer Scale Resolution
- Strain induced nonlinear optics in silicon
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Margrit Hanbücken Centre Interdisciplinaire de Nanoscience de Marseille, France.

Pierre Müller Université Paul Cézanne, Mar.

Ralf B. Wehrspohn Luther-University, Halle, Germany.
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