Properties of Advanced Semiconductor Materials. GaN, AIN, InN, BN, SiC, SiGe

  • ID: 2181106
  • Book
  • 216 Pages
  • John Wiley and Sons Ltd
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Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material.

∗ Reviews traditional semiconductor materials as well as new, advanced semiconductors.

∗ Essential authoritative handbook on the properties of semiconductor materials.
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Contributors.

Preface.

Gallium Nitride (GaN) (V. Bougrov, et al.).

Aluminum Nitride (AIN) (Y. Goldberg).

Indium Nitride (InN) (A. Zubrilov).

Boron Nitride (BN) (S. Rumyantsev, et al.).

Silicon Carbide (SiC) (Y. Goldberg, et al.).

Silicon–Germanium (Si—1–xGe—x) (F. Schäffler).

Appendix 1: Basic Physical Constants.

Appendix 2: Periodic Table of the Elements.

Appendix 3: Rectangular Coordinates for Hexagonal Crystal.

Appendix 4: The First Brillouin Zone for Wurtzite Crystal.

Appendix 5: Zinc Blende Structure.

Appendix 6: The First Brillouin Zone for Zinc Blende Crystal.

Additional References.
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Michael E. Levinshtein
Sergey L. Rumyantsev
Michael S. Shur
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