Materials and Physics of Emerging Nonvolatile Memories: Volume 1430. MRS Proceedings

  • ID: 2315247
  • Book
  • 212 Pages
  • Cambridge University Press
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Symposium E, 'Materials and Physics of Emerging Nonvolatile Memories', was held 9–13 April at the 2012 MRS Spring Meeting in San Francisco, California, which was a follow up of previous symposia on nonvolatile memories. In this year's symposium, 127 papers were presented in 11 sessions, including 17 invited talks, 53 oral and 57 poster contributions. Such a large number of paper submissions and high attendance in the symposium indicate continuous strong interest and world wide research efforts in the field of nonvolatile memories. Main research areas featured in Symposium E were advanced flash and nanofloating gate memories, ferroelectric and magnetoresistive memories, organic and molecular memories, memristors and resistive switching memories, and phase-change memories. In particular, a large number of contributions were presented on resistive switching memories. The selected papers in the proceedings volume have been categorised in these areas.
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Part I - Advanced Flash and Nanofloating Memories:
1. From SOI 1T-DRAMs to unified memory concepts;
2. High-k dielectrics for hybrid floating gate memory applications;
3. Nonvolatile memory characteristics of nanocrystalline molybdenum oxide embedded high-k film - device performance and light wavelength effects;
4. GaN quantum dots as charge storage elements for memory devices;
5. SONOS memory devices with ion beam modified nitride layers;
6. High-density Co/Al2O3 core-shell nanocrystal memory;

Part II - Ferroelectric and Magnetoresistive Memories:
7. Electronic transport in organic ferroelectric gate field-effect transistors with ZnO channel;
8. Nonvolatile power-gating FPGA based on pseudo-spin-transistor architecture with spin-transfer-torque MTJs;
9. High-quality, smooth Fe3O4 thin films on Si by controlled oxidation of Fe in CO/CO2;

Part III - Organic and Molecular Memories:
10. Flexible polymer atomic switches using ink-jet printing technique;
11. Development of organic resistive memory for flexible electronics;
12. Simulation of space charge limited organic non volatile memory elements;

Part IV - Resistive Switching Memories:
13. Ab-initio modeling of the resistance switching mechanism in RRAM devices: case study of hafnium oxide (HfO2);
14. Resistive switching memory based on ferroelectric polarization reversal at Schottky-like BiFeO3 interfaces;
15. Correlation between controllability of reset current and electrostatic energy released from the self capacitance of conducting bridge random access memory;
16. Synthesis of resistive memory oxides by ion implantation;
17. Firing of a pulse and its control using a novel floating electrode bi-resistive device;
18. Dynamic simulation of the migration of oxygen vacancy defects in rutile TiO2;
19. Forming-free resistance random access memory using Ta2O5/TaOx bi-layer prepared by magnetron sputtering method;
20. Anti-parallel circuit of resistive Cu/TaOx/Pt switches;
21. Time-dependent forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory;
22. Intrinsic resistive switching in bulk SiOx films;
23. Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch;
24. Identification of the location of conductive filaments formed in Pt/NiO/Pt resistive switching cells and investigation on their properties;
25. High total-dose proton radiation tolerance in TiN/HfO2/TiN ReRAM devices;
26. Time voltage dependency in resistance switching TiO2;
27. Improvement of RRAM device performance through on-chip resistors;
28. First-principles investigation of the conductive filament configuration in rutile TiO2-x ReRAM;
29. Electric-field-induced Al2O3/3C-SiC resistance memory.
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Yoshihisa Fujisaki
Panagiotis Dimitrakis
Eisuke Tokumitsu
Michael N. Kozicki Arizona State University.
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