Nitride Semiconductor Devices. Fundamentals and Applications

  • ID: 2330270
  • Book
  • 474 Pages
  • John Wiley and Sons Ltd
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Wide band gap nitride semiconductors and devices represent one of the fastest growing fields in R&D, meeting the demand created by the expansion of lighting applications and emerging high voltage switches for e.g. all electric vehicles or distributed power generation systems. This book, written by an expert in the field, introduces the reader to the fundamental issues, thus enabling him/her to follow the latest technological research.
Connecting material and device issues from a practical point of view, the author provides essential knowledge to advanced students, researchers and young professionals on fundamentals and operation of light emitters, RF FETs and switching devices for power electronics. A concise overview of nitride semiconductors from the material′s properties through device characteristics, which complements the acknowledged threevolume handbook written by the same author.

From the contents:

General Properties of Nitrides

Doping: Determination of Impurity and Carrier Concentrations

Metal Contacts

Carrier Transport

The p–n Junction

Optical Processes

Light–Emitting Diodes and Lighting

Semiconductor Lasers: Light Amplifi cation by Stimulated Emission of Radiation

Field Effect Transistors

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1. General Properties of Nitrides

2. Doping: Determination of Impurity and Carrier Concentrations

3. Metal Contacts

4. Carrier Transport

5. The p– n Junction

6. Optical Processes

7. Light–Emitting Diodes and Lighting

8. Semiconductor Lasers: Light Amplification by Stimulated Emission of Radiation

9. Field Effect Transistors

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Hadis Morkoç
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