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Future Trends in Microelectronics. Frontiers and Innovations. Wiley – IEEE

  • ID: 2388022
  • Book
  • 424 Pages
  • John Wiley and Sons Ltd
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Leaders in the field predict the future of the microelectronics industry

This seventh volume of Future Trends in Microelectronics summarizes and synthesizes the latest high–level scientific discussions to emerge from the Future Trends in Microelectronics international workshop, which has occurred every three years since 1995. It covers the full scope of cutting–edge topics in microelectronics, from new physical principles (quantum computing, correlated electrons), to new materials (piezoelectric nanostructures, terahertz plasmas), to emerging device technologies (embedded magnetic memories, spin lasers, and biocompatible microelectronics).

An ideal book for microelectronics professionals and students alike, this volume of Future Trends in Microelectronics:

  • Identifies the direction in which microelectronics is headed, enabling readers to move forward with research in an informed, efficient, and profitable manner
  • Includes twenty–nine contributor chapters by international authorities from leading universities, major semiconductor companies, and government laboratories
  • Provides a unified, cohesive exploration of various trends in microelectronics, looking to future opportunities, rather than past successes
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Preface ixS. Luryi, J. M. Xu and A Zaslavsky


Technology Innovation, Reshaping the Microelectronics Industry 4K. Kim and U.–I. Chung

Challenges and Limits for Very Low Energy Computation 49F. Balestra

Getting Rid of the DRAM Capacitor 59N. Rodriguez, F. Gamiz and S. Cristoloveanu

Physics and Design of Nanoscale Field Effect Diodes for Memory and ESD Protection Applications 73D. E. Ioannou, Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang and A. A. Salman

Sharp–Switching CMOS–Compatible Devices with High Current Drive 81J. Wan, S. Cristoloveanu, S. T. Le, A. Zaslavsky, C. Le Royer, S. A. Dayeh, D. E. Perea and S. T. Picraux

Magnetic Tunnel Junctions with a Composite Free layer: A New Concept for Future Universal memory 93A. Makarov, V. Sverdlov and S. Selberherr

Silicon Carbide High Temperature Electronics Is This Rocket Science? 102C. M. Zetterling

Microchip Post–Processing: There is Plenty of Room at the Top 110J. Schmitz

EUV Lithography: Today and Tomorrow 120V. Y. Banine

Manufacturability and Nanoelectronic Performance 133M. J. Kelly


Ultrafast Nanophotonic Devices For Optical Interconnects 142N. N. Ledentsov, V. A. Shchukin and J. A. Lott

Will Optical Communications Meet the Challenges of the Future? 160D. K. Mynbaev

Optical Antennae for Optoelectronics: Impacts, Promises, and Limitations 173H. Mohseni

Spin Modulation: Teaching Lasers New Tricks 183J. Lee, G. Boéris, R. Oszwaldowski, K. Výborný, C. Gøthgen and I ?uti

Silicon Photovoltaics: Accelerating to Grid Parity 194M. R. Pinto

Two– and Three–Dimensional Numerical Simulation of Advanced Silicon Solar Cells 210E. Sangiorgi, M. Zanuccoli, R. De Rose, P. Magnone and C. Fiegna

Mechanical Energy harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems 230G. Ardila, R. Hinchet, L. Montès and M. Mouis

Charged Quantum Dots for Photovoltaic Conversion and IR Sensing 244A. Sergeev, V. Mitin, N. Vagidov and K. Sablon

Active Optomecjanical Resonators 254D. Princepe, L. Barea, G. O. Luiz, G. Wiederhecker and N. C. Frateschi


State of the Art and Prospects for Quantum Computing 266M. I. Dyakonov

Wireless, Implantable Neuroprosthesis: Applying Advanced Technology to Untether the Mind 286D. A. Borton and A. V. Nurmikko

Correlated Electrons: A Platform for Solid State Devices 300S. D. Ha, Y. Zhou, R. Jaramillo and S. Ramanathan

Graphene–Based Integrated Electronic, Photonic and Spintronic Circuit 308A. D. Güçlü, P. Potasz and P. Hawrylak

Luttinger Liquid Behavior of Long GaAs Quantum Wires 319E. Levy, I. Sternfeld, M. Eshkol, M. Karpovski, A. Palevski, B. Dwir, A. Rudra, E. Kapon and Y. Oreg

Toward Spin Electronic Devices Based on Semiconductor Nanowires 328S. Heedt, I. Wehrmann, K. Weis, H. Hardtdegen, D. Grützmacher, Th. Schäpers, C. Morgan, D. E. Bürgler and R. Calarco

An Alternative Path for the Fabrication of Self–Assembled III–Nitride Nanowires 340A. Haab, M. Mikulics, T. Stoica, B. Kardynal, A. Winden, H. Hardtdegen, D. Grützmacher and E. Sutter

InAs Nanowires with Surface States as Building Blocks for Tube–Like Electrical Sensing Transitors 351N. V. Demarina, M. I. Lepsa and D. Grützmacher

Lévy Flight of Photoexcited Minority Carriers in Moderately Doped Semiconductors: Theory and Observation 359A. Subashiev and S. Luryi

Terahertz Plasma Oscillations in Field Effect transistors: Main Ideas and Experimental Facts 373W. Knap and M. I. Dyakonov


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Serge Luryi
Jimmy Xu
Alexander Zaslavsky
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