Beyond-CMOS Nanodevices 2

  • ID: 2674195
  • Book
  • 320 Pages
  • John Wiley and Sons Ltd
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This book offers a comprehensive review of the state–of–the–art in innovative Beyond–CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF–nanosensors–energy harvesters, on–chip electronic cooling, etc.) and Beyond–CMOS logic and memories applications.
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ACKNOWLEDGMENTS ix

GENERAL INTRODUCTION xiFrancis BALESTRA

INTRODUCTION TO VOLUME 2: SILICON NANOWIRE BIO–CHEMICAL SENSORS 1Francis BALESTRA

CHAPTER 1. SMALL SLOPE SWITCHES 5Adrian M. IONESCU and Francis BALESTRA, Kathy BOUCART, Giovanni SALVATORE and Alexandru RUSU

1.1. Introduction 5

1.2. Tunnel FETs 6

1.3. Ferroelectric gate FET 14

1.4. Bibliography 21

CHAPTER 2. NANOWIRE DEVICES 25Gérard GHIBAUDO, Sylvain BARRAUD, Mikaël CASSÉ, Xin Peng WANG, Guo Qiang LO, Dim–Lee KWONG, Marco PALA and Zheng FANG

2.1. Introduction 25

2.2. NW for logic CMOS devices 26

2.2.1. NW fabrication and technology 26

2.2.2. Quantum simulation of NWs 37

2.2.3. Electrical characterization of NWs 49

2.3. Nano–CMOS ultimate memories 66

2.3.1. Overview of memory  66

2.3.2. NW application in the evolutive solution path 67

2.3.3. NW technology along the disruptive solution path 73

2.4. Conclusions 81

2.5. Acknowledgments    82

2.6. Bibliography 82

CHAPTER 3. GRAPHENE AND 2D LAYER DEVICES FOR MORE MOORE AND MORE–THAN–MOORE APPLICATIONS 97Max C. LEMME

3.1. Introduction 97

3.2. Graphene 98

3.2.1. Graphene fabrication   98

3.2.2. Macroscopic graphene field effect transistors 101

3.2.3. Graphene nanoribbon transistors 103

3.2.4. Bilayer graphene and substrate effects   105

3.2.5. RF transistors 106

3.2.6. Alternative graphene switches 107

3.3. 2D materials beyond graphene 108

3.4. Conclusions 109

3.5. Acknowledgments    110

3.6. Bibliography 110

CHAPTER 4. NANOELECTROMECHANICAL SWITCHES 117Hervé FANET

4.1. Context   117

4.2. Nanorelay principles 118

4.2.1. The electrostatic actuation 119

4.2.2. The piezoelectrical actuation 120

4.2.3. The magnetic actuation  120

4.2.4. The thermal actuation 120

4.3. Electrostatic nanorelay modeling and optimization  121

4.3.1. Dynamic modeling 121

4.3.2. Quasi–static modeling 124

4.4. Technological challenges for NEMS computing 127

4.4.1. Low voltage operation 127

4.4.2. Reliability of contact technology 128

4.5. NEMS–based architectures 129

4.5.1. Conventional architectures 129

4.5.2. Adiabatic architectures 130

4.6. Conclusions 131

4.7. Bibliography 132

LIST OF AUTHORS  133

INDEX 135

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Francis Balestra
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