2. Basic properties of the MOS system;
3. Basic properties of the gate stack;
4. Electron states at MOS interfaces;
5. Carrier capture at bulk oxide traps;
6. Electrical characterization by Fermi-probe technique;
7. Electrical characterization by thermal action;
8. Characterization of oxide/silicon energy band alignment: internal photoemission and x-ray photoelectron spectroscopy;
9. Electron spin resonance;
10. MOS systems with silicon dioxide dielectrics;
11. MOS systems with high-k dielectrics;
12. Gate metals and effective work function;
13. Transmission probabilities and current leakage in gate oxides;
14. MOS systems on high-mobility channel materials.
Olof Engstr�m is Professor Emeritus of Microtechnology and Nanoscience, Chalmers University of Technology, G�teborg, Sweden, having formerly held positions in industrial high-power MOS devices and sensors. His research focuses on semiconductor quantum structures and interfaces. He is a member of the Royal Swedish Academy of Engineering Sciences.