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Nanostructured Semiconductors and Nanotechnology: Volume 1551. MRS Proceedings

  • ID: 3030014
  • Book
  • July 2014
  • 186 Pages
  • Cambridge University Press
Symposium R, 'Nanostructured Semiconductors and Nanotechnology' was held April 1–5, 2013, at the 2013 MRS spring meeting in San Francisco, California. The aim of the symposium was to review present and future trends of research on nanostructured semiconductors from fundamental issues of synthesis (epitaxy, nanofunctionalization, and self-assembly) to emerging applications in advanced devices (nanoelectronics, photovoltaics, nanophotonics, and so on).
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Part I - Nanostructuring Semiconductors:
1. Role of As in the anisotropic positioning of self-assembled InAs quantum dots;
2. Synthesis and compositional control of size monodisperse SixGe1-x nanocrystals for optoelectronic applications;
3. Self-energy models for scattering in semiconductor nanoscale devices: causality considerations and the spectral sum rule;
4. SiC-based 1D nanostructures;
5. Scanning photocurrent microscopy of as-grown silicon nanowire metallurgical junctions;
6. Impact of the aggressive scaling on the performance of FinFETs: the role of a single dopant in the channel;
7. High energy density, high operating frequency and energy efficient on-chip inductors based on coiled carbon nanotubes (CCNTs);
8. Structural evolution of nickel doped zinc oxide nanostructures;
9. Emission color tuning of Ge nanoparticles in the ranging from UV through visible to near-IR;
10. Nanostructured amorphous silicon on metal electrodes: electrical and optical properties;
11. Si nanowire-gold nanoparticles heterostructures for surface enhanced Raman spectroscopy;

Part II - Group IV Nanostructure and Self Assembly:
12. Nano-scale chemistry of complex self-assembled nanostructures in epitaxial SiGe films;
13. Ab initio simulation of 1D pattern formation of adsorbates on the Ge(100)-2 × 1 surface;
14. Instability formation in epitaxial SiGe lines under hydrogen annealing;

Part III - Synthesis, Characterization and Transport Properties:
15. Palladium catalyzed defect-free < 110> zinc-blende structured InAs nanowires;
16. Needles and haystacks: influence of catalytic metal nanoparticles on structural and vibrational properties and morphology of silicon nanowires synthesized by metal-assisted chemical etching;
17. Improving yields in bridging silicon nanowires with rational control of the bridge characteristics;
18. Effect of crystal size on the structural and functional properties of water-stable monodisperse ZnO nanoparticles synthesized via a polyol-route;
19. Simulation of DC characteristics of nano-scale hydrogen-terminated diamond MISFETs;
20. Electron localization, tunneling and energy spectrum for systems of double quantum dots;

Part IV - Quantum Dot Based Photovoltaic Devices:
21. Investigation of quantum dot solar cell device performance;
22. Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells;
23. Modeling and fabrication of quantum dot channel field effect transistors incorporating quantum dot gate;
24. Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings.
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Isabelle Berbezier Université d'Aix-Marseille.

Jean-Noel Aqua
Jerrold Floro University of Virginia.

Andrej Kuznetsov
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