Defects in Semiconductors, Vol 91. Semiconductors and Semimetals

  • ID: 3103089
  • Book
  • 458 Pages
  • Elsevier Science and Technology
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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.

The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.

  • Expert contributors
  • Reviews of the most important recent literature
  • Clear illustrations
  • A broad view, including examination of defects in different semiconductors
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- Role of Defects in the Dopant Diffusion in Si

Peter Pichler

- Electron and Proton Irradiation of Silicon

Arne Nylandsted Larsen and Abdelmadjid Mesli

- Ion Implantation Defects and Shallow Junctions in SI and GE

Enrico Napolitani and Giuliana Impellizzeri

- Defective Solid-phase Epitaxial Growth of Si

Nicholas G. Rudawski, Aaron G. Lind and Thomas P. Martin

- Nanoindentation of Silicon and Germanium

Mangalampalli S. R. N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams

- Analytical Techniques for Electrically Active Defect Detection

Eddy Simoen, Johan Lauwaert and Henk Vrielinck

- Surface and Defect States in Semiconductors Investigated by Surface Photovoltage

Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini

- Point Defects in ZnO

Matthew D. McCluskey

- Point Defects in GaN

Michael A. Reshchikov

- Point Defects in Silicon Carbide Naoya Iwamoto and Bengt G. Svensson
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Note: Product cover images may vary from those shown