Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN on GaN); By Products (Blu-ray Disc (BD), LEDs, UV LEDs) By Industry - Forecast (2015-2020)

  • ID: 3339492
  • Report
  • Region: Global
  • 210 pages
  • IndustryARC
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  • AE Tech. Co. Ltd.
  • Cree Incorporated
  • GaN Systems Inc.
  • Kyma Technologies
  • PAM Xiamen Co., Ltd.
  • Soitec Pte ltd
  • MORE
"Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on sapphire, GaN on Si, GaN on SiC, GaN on GaN); By Products (Blu-ray Disc (BD), LEDs, UV LEDs) By Industry (Consumer Electronics, Telecom, Industrial, Power, Solar, Wind) - Forecast (2015-2020)"

Gallium Nitride (GaN) is a compound semiconductor material which possesses notable advantages over the conventional semiconductor materials such as Silicon, Silicon Carbide, Aluminum, and so on. This material is most commonly used in optoelectronic products such as Lasers, LEDs. The GaN material is also employed in Power Electronics, and Radio Frequency Amplifiers. The usage of the GaN material is not same in these products. The GaN material is as a thin film grown on other substrates such as Sapphire, Silicon, and Silicon Carbide. These thin films can also be called as templates. The GaN substrates market encompasses the core substrates, that is GaN on GaN or bulk GaN substrates as well as the GaN on Si, GaN on SiC, and GaN on Sapphire substrates.

GaN Substrates Market report is a thorough study of different types of substrates, devices, and end use industries which employ gallium nitride. There are four types of substrates, namely, GaN on Sapphire, GaN on Si, GaN on SiC and GaN on GaN. Here, the market is dominated by foreign substrates, where GaN is grown by epitaxial methods onto sapphire, silicon and silicon carbide. The bulk GaN substrates, that is, GaN grown on core GaN substrate, are very less in volume and are emerging. The market is also segmented by the product/device which is made on these substrates into LEDs, Lasers, Power Switching Devices and others. Finally, the market is studied across end use industries such as Healthcare, Automotive, Military and Communication, General Lighting, Consumer Electronics, Power, Telecom, and others. The overall market is also presented from the perspective of different geographic regions and the key countries for this industry. Competitive landscape for each of the product types is highlighted and market players are profiled.

The GaN substrates market is dominated by sapphire which is nearing maturity. This is followed by SiC substrates which are used by Cree Inc. predominantly. Silicon and GaN are currently smaller in volume, but are estimated to grow hugely in the coming years. The demand for less defects and efficient devices is estimated to drive demand for larger substrates. LED and Power Electronic products are projected to be the key growth areas for the market.

Major Players in GaN Substrates and Devices Market:
Rubicon Technology, Inc.
Sumitomo Electric Industries, Inc.
Mitshibishi Chemical Corporation
Cree Inc.
Osram Licht AG
Nichia Corporation
Avogy, Inc.
Please Note: The report is to be delivered in 1-2 working days after an order is placed.
Note: Product cover images may vary from those shown
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  • AE Tech. Co. Ltd.
  • Cree Incorporated
  • GaN Systems Inc.
  • Kyma Technologies
  • PAM Xiamen Co., Ltd.
  • Soitec Pte ltd
  • MORE
1. GaN Substrates Industry - Market Overview
1.1. Introduction
1.2. History & evolution
1.3. Design architecture
1.4. Market Scope
1.5. Market Segmentation
1.6. Stakeholders
2. GaN Substrates Industry - Executive Summary
3. GaN Substrates Industry - Market Landscape
3.1. Market Share Analysis
3.2. Comparative Analysis
3.2.1. Product Benchmarking
3.2.2. End user profiling
3.2.3. Patent Analysis
3.2.4. Top 5 Financials Analysis
4. GaN Substrates Industry - Market Forces
4.1. Market Drivers
4.2. Market Constraints
4.3. Market Challenges
4.4. Attractiveness of the GaN Substrates Industry
4.4.1. Power of Suppliers
4.4.2. Power of Customers
4.4.3. Threat of New entrants
4.4.4. Threat of Substitution
4.4.5. Degree of Competition
5. GaN Substrates Market - Strategic Analysis
5.1. Value Chain Analysis
5.2. Pricing Analysis
5.3. Opportunities Analysis
5.4. Product/Market Life Cycle Analysis
5.5. Suppliers and Distributors
6. GaN Substrates Market - By Size
6.1. 2-inch
6.2. 4-inch
6.3. 6-inch
6.4. Others
7. GaN Substrates Market - By Type
7.1. Introduction
7.2. GaN on sapphire
7.3. GaN on Si
7.4. GaN on SiC
7.5. GaN on GaN
7.6. Others
8. GaN Substrates Market - By Product
8.1. Lasers
8.2. Power switching Devices
8.3. Radio frequency amplifiers
8.4. LEDs
8.5. UV LEDs
9. GaN Substrates Market - By End Use Industry
9.1. Health care
9.2. Automobiles
9.3. Consumer Electronic goods
9.4. General Lighting
9.5. Industrial, Power, Solar, And Wind Sectors
9.6. IT sector
9.7. Military and Defense
9.8. Others
10. GaN Substrate Market - By Substrate Production Process Type
10.1. Hydride Vapor Phase Epitaxy (HVPE)
10.1.1. Single Substrate Development
10.1.2. Boule Growth Development
10.1.3. Non-polar and Semi-polar Substrate Development
10.2. Ammonothermal growth
10.3. Metal-Organic Chemical Vapor Deposition (MOCVD)
10.4. Others
11. GaN based Products - By Technology Node
11.1. 350 nm
11.2. 250 nm
11.3. 220 nm
11.4. 180 nm
11.5. Others
12. GaN Substrates Market - By Geography
12.1. North America
12.1.1. U.S
12.1.2. Mexico
12.1.3. Others
12.2. South America
12.2.1. Brazil
12.2.2. Chile
12.2.3. Others
12.3. Europe
12.3.1. Germany
12.3.2. Italy
12.3.3. France
12.3.4. Others
12.4. Asia Pacific
12.4.1. China
12.4.2. Japan
12.4.3. India
12.4.4. Others.
12.5. ROW
12.5.1. Middle East
12.5.2. Africa
13. Market Entropy
13.1. New Product Launches
13.2. M&As, Collaborations, JVs and Partnerships
14. Company Profiles
14.1. Saint Gobain Ltd
14.2. Sumitomo Electric Industries, Ltd.
14.3. Toshiba Corporation
14.4. Soitec Pte ltd
14.5. Mitsubishi Chemical Corporation
14.6. Kyma Technologies
14.7. Fujitsu Limited.
14.8. Aixtron Ltd.
14.9. EpiGaN NV
14.10. NTT Advanced Technology Corporation
14.11. NGK Insulators Ltd
14.12. PAM Xiamen Co., Ltd.
14.13. Unipress Ltd.
14.14. Nanowin technologies Co. Ltd.
14.15. AE Tech. Co. Ltd.
14.16. Six point Materials, Inc.
14.17. Sino Nitride Semiconductors Co. Ltd.
14.18. Texas Instruments Incorporated
14.19. Cree Incorporated
14.20. Koninklijke Philips N.V.
14.21. GaN Systems Inc.
14.22. Infineon Technologies
14.23. Soraa Inc.
14.24. Ammono S.A.
14.25. MTI Corporation
15. Appendix
15.1. Abbreviations
15.2. Sources
15.3. Research Methodology
15.4. Compilation of Expert Insights
15.5. Disclaimer
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Saint Gobain Ltd
Sumitomo Electric Industries, Ltd.
Toshiba Corporation
Soitec Pte ltd
Mitsubishi Chemical Corporation
Kyma Technologies
Fujitsu Limited.
Aixtron Ltd.
NTT Advanced Technology Corporation
NGK Insulators Ltd
PAM Xiamen Co., Ltd.
Unipress Ltd.
Nanowin technologies Co. Ltd.
AE Tech. Co. Ltd.
Six point Materials, Inc.
Sino Nitride Semiconductors Co. Ltd.
Texas Instruments Incorporated
Cree Incorporated
Koninklijke Philips N.V.
GaN Systems Inc.
Infineon Technologies
Soraa Inc.
Ammono S.A.
MTI Corporation
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown