Global Next Generation Memory Market by Product Type, Solution, Application, Industry Verticals, Geography and Vendors - Market Shares, Forecasts and Trends (2016 - 2021). - Product Image

Global Next Generation Memory Market by Product Type, Solution, Application, Industry Verticals, Geography and Vendors - Market Shares, Forecasts and Trends (2016 - 2021).

  • ID: 3421411
  • Report
  • Region: Global
  • 111 pages
  • Mordor Intelligence
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The Global Next Generation Memory Market is Expected to Grow $3.57 billion by 2020

FEATURED COMPANIES

  • Adesto Technologies
  • Corsair Memory
  • Everspin Technologies
  • Intel Corporation
  • Micron Technology Inc
  • Sandisk Corporation
  • MORE
Next Generation Memory Technologies have gained significant momentum in recent years due to rising demand for cost effective, faster memory solutions. The older memory technologies have limitations because of their outdated architecture and higher power consumption. There is an increasing need for universal memory solutions that can serve to varied applications with same effectiveness. Memory systems available at present are more advanced than the traditional memory systems like SRAM, Flash Memory and others, since they provide high data transmission speed, high storage capacity and lower cost.

Global Next Generation Memory Market is expected to grow $3.57 billion by 2020; growing at a CAGR of 42.86% over the period 2014- 2020. Market is driven by the factors such as faster switching time, high endurance and power efficiency of the next generation memory technologies.

Global next generation memory market is segmented on various parameters like on the basis of technology, application, end users and geography. On the basis of technology the market is categorised into Volatile and Non Volatile memories. Volatile memories can further be sub-categorised into Dynamic Random Access Memory and Static Random Access Memory and Non-Volatile Memories can further be divided into Memristor or Resistive Random Access Memory (ReRAM), Phase-Change Random-Access Memory (PC-RAM), Magneto resistive Random-Access Memory (M-RAM), Ferroelectric Ram (F-RAM) On the basis of application the market is segmented into cache memory, Embedded MCUs, Smart Cards, Mobile Phones and others. The next generation memory market is further segmented by various end user industries like automotive, defence, consumer electronics, industrial automation and many others. On the basis of region the market is segmented into three major regions namely North America, Europe, Asia Pacific and Rest of the World.

There are a number of next generation memory technologies on the horizon that hold great promise to meet the evolving needs of consumer devices and enterprise storage systems and applications. Technologies like DDR4, Hybrid Memory Cubes, UFS among others are ready to revolutionise the next generation memory market.

The key players of the market are Toshiba Corporation, Intel Corporation, Toshiba, Samsung, IBM and many others.

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FEATURED COMPANIES

  • Adesto Technologies
  • Corsair Memory
  • Everspin Technologies
  • Intel Corporation
  • Micron Technology Inc
  • Sandisk Corporation
  • MORE
1. Introduction

1.1 Description

1.2 Research Methodology

2. Executive Summary

3. Market Overview

3.1 Current Market Scenario

3.2 Application of Next Generation Memory Technologies

3.3 Factors Driving the Market

3.4 Factor restraining the market

3.5 Current Opportunities in the market

3.6 Technology Snapshot

3.7 Porters Five Forces

3.7.1 Bargaining Power of Suppliers

3.7.2 Bargaining Power of Consumers

3.7.3 Threat of New Entrants

3.7.4 Threat of Substitute Products and Services

3.7.5 Competitive Rivalry within the Industry

4. Next Generation Memory Market Segmentation by Technology

4.1 Non Volatile Next generation Memory Technologies

4.1.1 Memristor or Resistive Random Access Memory (ReRAM)

4.1.2 Phase-Change Random-Access Memory (PC-RAM)

4.1.3 Magnetoresistive Random-Access Memory (M-RAM)

4.1.4 Ferroelectric Ram (F-RAM)

4.1.5 Racetrack Memory

4.2 Volatile Next Generation Memory Technologies

4.2.1 Dynamic Random Access Memory (D-RAM)

4.2.1.1 T-RAM

4.2.1.2 T-TRAM

4.2.1.3 Others

4.2.2 Static Random Access Memory (S-RAM)

4.2.2.1 Z-RAM

5. Next Generation Memory Market Segmentation by Application

5.1 Cache Memory

5.2 Embedded MCU

5.3 Smart Cards

5.4 Mobile Phones

5.5 Others

6. Next Generation Memory Market Segmentation by Industry Vertical

6.1 BFSI

6.2 Government

6.3 Consumer Electronics

6.4 Communication

6.6 Others

7. Next Generation Memory Market Segmentation by Geography

7.1 North America

7.1.1 Introduction

7.1.2 United States

7.1.3 Canada

7.1.4 Others

7.2 Europe

7.2.1 Introduction

7.2.2 Germany

7.2.3 United Kingdom

7.2.4 France

7.2.5 Others

7.3 Asia Pacific

7.3.1 Introduction

7.3.2 China

7.3.3 Japan

7.3.4 India

7.3.5 Others

7.4 Rest of the World

7.4.1 Introduction

8. Next Generation Memory Market Vendor Market Share

9. Company Profiles

9.1 Intel Corporation

9.2 Toshiba Corporation

9.3 Samsung Electronics

9.4 Adesto Technologies

9.5 Micron Technology Inc

9.6 IBM Corporation

9.7 Cypress Semiconductor Corporation

9.8 Everspin Technologies

9.9 Sandisk Corporation

9.10 Everspin Technologies

9.11 Crossbar Inc.

9.12 ASUS

9.13 Corsair Memory

9.14 Kingston Technologies

9.15 Sony

9.16 Windbond Electronics Corporation

9.17 Avalanche Technologies Inc

9.18 SK Hynix Inc.

9.19 Transcend

9.20 Corsair Memory

10. Investment Analysis

10.1 Recent Mergers and Acquisitions

10.2 Investor Outlook
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- Adesto Technologies
- ASUS
- Avalanche Technologies Inc
- Corsair Memory
- Crossbar Inc.
- Cypress Semiconductor Corporation
- Everspin Technologies
- IBM Corporation
- Intel Corporation
- Kingston Technologies
- Micron Technology Inc
- Samsung Electronics
- Sandisk Corporation
- SK Hynix Inc.
- Sony
- Toshiba Corporation
- Transcend
- Windbond Electronics Corporation

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