Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge.
This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures.
Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics.
- Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices
- Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics
- Details the properties of semiconductors for spintronics
Part One: Theory of magnetism in III-V semiconductors 1 Computational Nano-materials Design for Nano-Spintronics : Room Temperature Spintronics Applications 2 Electronic structure of magnetic impurities and defects in semiconductors: a guide to the theoretical models 3 Modeling magnetism in Rare Earth-doped Gallium Nitride bulk and nanoparticles Part Two: Magnetic semiconductors based on Rare Earth/Transition Metals 4 Prospects for Rare-Earth-Based DMS Alloys and Hybrid Magnetic Rare-Earth/Semiconductor Heterostructures 5 Magneto-Optical Properties of Er-doped GaAs 6 Gadolinium-doped Gallium-Nitride (GaN:Gd): synthesis routes, structure and magnetism 7 MOCVD Growth and Magnetic-Optical Characterization of Er-doped III-N Films 8 Growth of Eu-doped GaN and its Magneto-Optical Properties 9 Optical and Magnetic Characterization of III-N:Nd grown by MBE Part Three: Properties of magnetic semiconductors and spintronic devices 10 Growth of Gadolinium-doped Gallium Nitride (GaN:Gd) and Manganese-doped Gallium Nitride (GaN:Mn) and spin devices 11 Gadolinium-doped III-Nitride Diluted Magnetic Semiconductors for Spintronics Applications 12 Ferromagnetic Behavior in Transition Metal Doped III-N Semiconductors 13 Bipolar magnetic junction transistors for logic applications
Prof Dierolf came to Lehigh in 2000 with a Ph.D in Physics from the University of Utah, and a Habilitation from the University of Paderborn, Germany, He is the current Chair of the Physics Department and holds a Joint appointment with the Materials Science Department. In 2008, he was a Visiting Mercator Professor at the University of Bonn. He is on the International Committees of both the International and the European Conference on Defect in Insulating Materials (ICDIM, EuroDIM). He has served as a Principal Editor for the Journal of Materials Research and has been Guest Editor for Optical Materials. His research is focused on the optical spectroscopy and microscopy of insulating and semiconducting materials. His group exploits the wealth of information that can be obtained by combining high spatial resolution (down to 50nm) of a near field optical microscope or a SEM instrument with the structural and atomic scale information contained in excitation-emission data, cathodoluminescence and Raman spectra.
Ferguson holds a Ph.D. in compound semiconductors from University of St. Andrews in Scotland (1989). He also holds a master of science in optoelectronics and laser devices from St. Andrews (1986) and a bachelor of science degree in physics from Heriot-Watt University in Scotland (1984).
Prior to joining UNC Charlotte, Ferguson was a professor of electrical engineering at Georgia Institute of Technology from 2001 to 2009. While at Georgia Tech, he also served as director of the Focused Research Program on Next-Generation Lighting and held a faculty appointment in the School of Materials Science and Engineering from 2004 through 2009.
Zavada, John M
Dr. Zavada received a BA degree in physics from Catholic University and MS and PhD degrees, also in physics, from New York University. He has held previous academic appointments at North Carolina State University and the Imperial College of Science and Technology in London. He is a Fellow of the Optical Society of America and a recipient of the Army's Meritorious Civilian Service Award.