Silicide Technology for Integrated Circuits focuses on the task of developing and applying metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages and provides guidance on the application of the latest emerging technology.
The book begins with an overview of silicide technology and moves on to provide the fundamentals of silicide formation, including various processing methods. Topics such as the optical emission properties of Fe silicide and their importance for Si-based optoelectronics are discussed, along with Si-Ge and SOI, which represent two possible substrate frames for the next-generation of Si-based device technology. This invaluable publication also provides comprehensive coverage of the characterisation methods used in silicide technology.
- Chapter 2: Silicide formation
- Chapter 3: Titanium silicide technology
- Chapter 4: Cobalt silicide technology
- Chapter 5: Nickel silicide technology
- Chapter 6: Light-emitting iron disilicide
- Chapter 7: Silicide contacts for Si/Ge devices
- Chapter 8: Silicide technology for SOI devices
- Chapter 9: Characterisation of metal silicides
Professor Chen received his PhD in physics from UC Berkeley in 1974. He became a faculty member in the Department of Materials Science and Engineering, National Tsing Hua University in 1977. He is currently the Dean, College of Engineering and Chair Professor, Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan. Professor Chen has conducted extensive research on integrated circuits thin film materials for almost three decades. His current research interests include interfacial reaction of metal thin films on silicon and Si-Ge alloys, advanced metallisation in integrated circuits as well as nanostructured materials.