Microwave Field-Effect Transistors. Edition No. 3. Electromagnetics and Radar - Product Image

Microwave Field-Effect Transistors. Edition No. 3. Electromagnetics and Radar

  • ID: 3528061
  • Book
  • IET Books
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This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

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- Chapter 1: Introduction
- Chapter 2: GaAs FET Theory-Small Signal
- Chapter 3: GaAs FET Theory-Power
- Chapter 4: Requirements and Fabrication of GaAs FETs
- Chapter 5: The Design of Transistor Amplifiers
- Chapter 6: FET Mixers
- Chapter 7: GaAs FET Oscillators
- Chapter 8: FET and IC Packaging
- Chapter 9: Novel FET Circuits
- Chapter 10: Gallium Arsenide Integrated Circuits
- Chapter 11: Other III-V Materials and Devices
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Raymond S. Pengelly Raytheon Company, Andover, USA.
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