Insulated-Gate Bipolar Transistors (IGBTs) Market by Type, Power Rate, Application - Global Opportunity Analysis and Industry Forecast, 2014 - 2022

  • ID: 3773181
  • Report
  • Region: Global
  • 155 pages
  • Allied Analytics LLP
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FEATURED COMPANIES

  • ABB Group
  • Fuji Electric Co Ltd
  • Infineon Technologies AG
  • IXYS Corporation
  • Mitsubishi Electric Corp
  • NXP Semiconductors NV
  • MORE
Insulated-Gate Bipolar Transistors (IGBTs) Market by Type (Discrete IGBT, IGBT Module), Power Rate (High Power, Medium Power, Low Power), Application (Energy & Power, Consumer Electronics, Inverter & UPS, Electric Vehicle) - Global Opportunity Analysis and Industry Forecast, 2014 - 2022

Insulated-Gate Bipolar Transistor (IGBT) is a three-terminal electronic switching device, which is a combination of Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT) in monolithic form. It allows the flow of power only when the gate terminal is connected to the positive supply of the source. Moreover, it is a minority-carrier device with several benefits such as large bipolar current-carrying capability and high input impedance. IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.

IGBT is widely used in various applications such as renewable energy, High Voltage Direct Current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.

The world IGBT market is segmented on the basis of type, power rating, application, and geography. The type segment is bifurcated into discrete IGBT and IGBT modules. The power rating segment includes high power, medium power, and low power IGBTs. Based on application, the market is segment into energy & power, consumer electronics, inverter & UPS, electrical vehicle, industrial system, and others. Based on geography, the market is analyzed into North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, India, Japan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).

The major companies profiled in the report include ABB Group, STMicroelectronics N.V., Toshiba Corporation, IXYS Corporation, Renesas Electronics Corp, Semikron International GmbH, Mitsubishi Electric Corp., Infineon Technologies AG, Fuji Electric Co. Ltd., and NXP Semiconductors N.V.

POTENTIAL BENEFITS FOR STAKEHOLDERS

Comprehensive analysis of the current trends and future estimations in the world IGBT market is provided in the report
The report provides a competitive scenario of the market with growth trends, structure, driving factors, scope, opportunities, and challenges
The report includes a detailed analysis of the key segments to provide insights on the market dynamics
Porter’s Five Forces analysis highlights the potential of buyers and suppliers as well as provides insights on the competitive structure of the market to devise effective growth strategies and facilitate better decision-making
Value chain analysis provides key inputs on the role of stakeholders involved at various stages

MARKET SEGMENTATION

The world IGBT market is segmented on the basis of type, power rating, application, and geography.

BY TYPE

Discrete IGBT
IGBT Module
BY POWER RATING

High Power
Medium Power
Low Power

BY APPLICATION

Energy & Power
Consumer Electronics
Inverter & UPS
Electric Vehicle
Industrial System
Others (Medical Devices & Traction)

BY GEOGRAPHY

North America
U.S.
Mexico
Canada
Europe
UK
Germany
France
Rest of Europe
Asia-Pacific
India
China
Japan
South Korea
Rest of Asia-Pacific
LAMEA
Latin America
Middle East
Africa

KEY PLAYERS

ABB Group
STMicroelectronics N.V.
Toshiba Corporation
IXYS Corporation
Renesas Electronics Corp.
Semikron International GmbH
Mitsubishi Electric Corp.,
Infineon Technologies AG
Fuji Electric Co. Ltd.
NXP Semiconductors N.V.
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Note: Product cover images may vary from those shown
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FEATURED COMPANIES

  • ABB Group
  • Fuji Electric Co Ltd
  • Infineon Technologies AG
  • IXYS Corporation
  • Mitsubishi Electric Corp
  • NXP Semiconductors NV
  • MORE
CHAPTER 1 INTRODUCTION

1.1 Report Description
1.2 Key Benefits
1.3 Key Market Segments
1.4 Research Methodology

1.4.1 Secondary Research
1.4.2 Primary Research
1.4.3 Analyst Tools and Models

CHAPTER 2 EXECUTIVE SUMMARY

2.1 CXO Perspective

CHAPTER 3 MARKET OVERVIEW

3.1 Market Definition and Scope
3.2 Key Findings

3.2.1 Top Impacting Factors
3.2.2 Top Investment Pockets
3.2.3 Top Winning Strategies

3.3 Porters Five Forces Analysis

3.3.1 Bargaining Power of Suppliers
3.3.2 Bargaining Power of Buyers
3.3.3 Threat of Substitution
3.3.4 Threat of New Entrants
3.3.5 Competitive Rivalry

3.4 Market Share Analysis, 2015 (%)
3.5 IGBT Market: Value Chain Analysis
3.6 Market Dynamics

3.6.1 Drivers

3.6.1.1 Increasing demand for electric vehicle
3.6.1.2 Aggrandized need for high voltage operating devices
3.6.1.3 Enhanced efficiency

3.6.2 Restraints

3.6.2.1 Current leakage at high temperature

3.6.3 Opportunities

3.6.3.1 Government initiatives to establish HVDC and smart grid

CHAPTER 4 WORLD INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) MARKET, BY TYPE

4.1 Discrete IGBT

4.1.1 Key Market Trends
4.1.2 Key Drivers and Opportunities
4.1.3 Market Size and Forecast

4.2 IGBT Module

4.2.1 Key Market Trends
4.2.2 Key Drivers and Opportunities
4.2.3 Market Size and Forecast

CHAPTER 5 WORLD INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) MARKET, BY POWER RATING

5.1 High power

5.1.1 Key Market Trends
5.1.2 Key Drivers and Opportunities
5.1.3 Market Size and Forecast

5.2 Medium power

5.2.1 Key Market Trends
5.2.2 Key Drivers and Opportunities
5.2.3 Market Size and Forecast

5.3 Low power

5.3.1 Key Market Trends
5.3.2 Key Drivers and Opportunities
5.3.3 Market Size and Forecast

CHAPTER 6 WORLD INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) MARKET, BY APPLICATION

6.1 Energy & Power

6.1.1 Key Market Trends
6.1.2 Key Drivers and Opportunities
6.1.3 Market Size and Forecast

6.2 Consumer Electronics

6.2.1 Key Market Trends
6.2.2 Key Drivers and Opportunities
6.2.3 Market Size and Forecast

6.3 Inverter & UPS

6.3.1 Key Market Trends
6.3.2 Key Drivers and Opportunities
6.3.3 Market Size and Forecast

6.4 Electric Vehicle

6.4.1 Key Market Trends
6.4.2 Key Drivers and Opportunities
6.4.3 Market Size and Forecast

6.5 Industrial System

6.5.1 Key Market Trends
6.5.2 Key Drivers and Opportunities
6.5.3 Market Size and Forecast

6.6 Others

6.6.1 Key Market Trends
6.6.2 Key Drivers and Opportunities
6.6.3 Market Size and Forecast

CHAPTER 7 WORLD INSULATED GATE BIPOLAR TRANSISTORS (IGBTS) MARKET, BY GEOGRAPHY

7.1 North America

7.1.1 Key Market Trends
7.1.2 Key Drivers and Opportunities
7.1.3 Market Size and Forecast
7.1.4 U.S.
7.1.5 Mexico
7.1.6 Canada

7.2 Europe

7.2.1 Key Market Trends
7.2.2 Key Drivers and Opportunities
7.2.3 Market Size and Forecast
7.2.4 U.K.
7.2.5 Germany
7.2.6 France
7.2.7 Rest of Europe

7.3 Asia-Pacific

7.3.1 Key Market Trends
7.3.2 Key Drivers and Opportunities
7.3.3 Market Size and Forecast
7.3.4 China
7.3.5 Japan
7.3.6 India
7.3.7 South Korea
7.3.8 Rest of Asia-Pacific

7.4 LAMEA

7.4.1 Key Market Trends
7.4.2 Key Drivers and Opportunities
7.4.3 Market Size and Forecast
7.4.4 Latin America
7.4.5 Middle East
7.4.6 Africa

CHAPTER 8 COMPANY PROFILES

8.1 ABB Group

8.1.1 Company Overview
8.1.2 Company Snapshot
8.1.3 Operating Business Segments
8.1.4 Business Performance
8.1.5 Key Strategic Moves and Developments

8.2 STMicroelectronics N.V.

8.2.1 Company overview
8.2.2 Operating Business Segments
8.2.3 Business Performance
8.2.4 Key Strategic Moves and Developments

8.3 Toshiba Corporation

8.3.1 Company overview
8.3.2 Operating Business Segments
8.3.3 Business Performance
8.3.4 Key Strategic Moves and Developments

8.4 IXYS Corporation

8.4.1 Company overview
8.4.2 Operating Business Segments
8.4.3 Business Performance
8.4.4 Key Strategic Moves and Developments

8.5 Renesas Electronics Corp.

8.5.1 Company overview
8.5.2 Business Performance
8.5.3 Key Strategic Moves and Developments

8.6 Semikron International GmbH

8.6.1 Company overview
8.6.2 Operating Business Segments
8.6.3 Key Strategic Moves and Developments

8.7 Mitsubishi Electric Corp.

8.7.1 Company Overview
8.7.2 Company Snapshot
8.7.3 Operating Business Segments
8.7.4 Business Performance
8.7.5 Key Strategic Moves and Developments

8.8 Infineon Technologies AG

8.8.1 Company Overview
8.8.2 Company Snapshot
8.8.3 Operating Business Segments
8.8.4 Business Performance
8.8.5 Key Strategic Moves and Developments

8.9 Fuji Electric Co. Ltd.

8.9.1 Company Overview
8.9.2 Company Snapshot
8.9.3 Operating Business Segments
8.9.4 Business Performance
8.9.5 Key Strategic Moves and Developments

8.10 NXP Semiconductors N.V

8.10.1 Company overview
8.10.2 Business Performance
8.10.3 Key Strategic Moves and Developments
Note: Product cover images may vary from those shown
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FEATURED COMPANIES

  • ABB Group
  • Fuji Electric Co Ltd
  • Infineon Technologies AG
  • IXYS Corporation
  • Mitsubishi Electric Corp
  • NXP Semiconductors NV
  • MORE
The Global Insulated-gate bipolar transistors (IGBTs) Market would reach $11 billion by 2022. Asia-Pacific dominates the global market, accounting for more than 50% revenue share of the overall IGBT market, followed by Europe.

IGBT module is the foremost device, which is widely used in industries. Currently, rise in demand for higher efficiency, faster switching, and minimal power loss are some of the key driving factors of the market. Moreover, aggrandized need for high voltage operating device is expected to provide huge opportunities to the market players. IGBT module is the leading segment in the global market, and is expected to maintain this trend throughout the forecast period. However, discrete IGBT segment is expected to witness significant growth in the future, owing to its compact size and enhanced efficiency.

High power IGBT segment is projected to maintain its lead in the overall IGBT market, as these modules are used for power transmission in high voltages with minimum current loss. Moreover, Asia-Pacific is the major revenue contributor of this market due to increasing demand for electric vehicles utilizing IGBT for power transaction. China, India, and Japan are the major consumers of IGBT in Asia-Pacific.

Among applications, energy & power segment dominated the global market in 2014, accounting for 23% share. Proactive government initiative to establish smart grids and High Voltage Direct Current (HVDC) has fueled the market growth. However, electric vehicle is anticipated to be the most lucrative application segment, and is expected to grow at a CAGR of 12.1% during the forecast period. This is attributed to increasing demand for power management in electric vehicles. Moreover, Asia-Pacific was the leading revenue contributor to the electric vehicle market in 2014.

Asia-Pacific accounted for majority of the revenue in 2014, and is expected to maintain its dominance throughout the forecast period. This is attributed to rising number of electric vehicles and increasing industry systems, which increase the demand for IGBT. Moreover, advancements in consumer electronic and inverters & UPS would boosts the IGBT market, especially in Asian countries such as China, Japan, South Korea, and India.

High-Voltage IGBTs are integrated in automotive applications, as they enable power management and reduce power leakage. Moreover, they offer several benefits such as high efficiency, reduced system complexity, and minimized system maintenance. IGBT module represents almost 6062% of the total IGBT market, owing to its resilience and higher efficiency. In addition, substantial growth in the demand for electric vehicles and customer shift towards advanced power semiconductor to achieve better efficiency would promote its adoption in energy & power, inverter & UPS, consumer electronics, and industry systems, states Rakesh Singh, Manager, Research, Semiconductor & Electronics, AMR.

Asia-Pacific is projected to be the fastest growing region throughout the analysis period, owing to increase in focus on power transmission, renewable energy, and adoption of IGBT in electric vehicles. Furthermore, increase in IT expenditures in several countries including China, Japan, India, and South Korea to cater to end-user storage needs have fueled the market growth. Moreover, technological advancements to overcome power loss issues in IGBT would offer lucrative opportunities for the market players.

Key findings of the IGBT Market:

In 2014, IGBT module type segment dominated the overall IGBT market in terms of revenue, and is projected to grow at a CAGR of 10.3% during the forecast period
High power segment is projected to grow at a CAGR of 10.8% during the forecast period
Electric vehicle segment is expected to exhibit the fastest growth during the forecast period, owing to increasing applications of IGBT in e-bikes and e-cars
Japan is the major shareholder in the Asia-Pacific IGBT market, accounting for about 34% share

The key players in the IGBT market have focused on expanding their business operations in the fast-growing emerging countries with new product launch as the preferred strategy. The major players profiled in this report include ABB Group, STMicroelectronics N.V., Toshiba Corporation, IXYS Corporation, Renesas Electronics Corp, Semikron International GmbH, Mitsubishi Electric Corp., Infineon Technologies AG, Fuji Electric Co. Ltd., and NXP Semiconductors N.V.
Note: Product cover images may vary from those shown
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  • ABB Group
  • STMicroelectronics NV
  • Toshiba Corporation
  • IXYS Corporation
  • Renesas Electronics Corp
  • Semikron International GmbH
  • Mitsubishi Electric Corp
  • Infineon Technologies AG
  • Fuji Electric Co Ltd
  • NXP Semiconductors NV
Note: Product cover images may vary from those shown
6 of 5
Note: Product cover images may vary from those shown
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