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III-Nitride Semiconductor Optoelectronics, Vol 96. Semiconductors and Semimetals

  • ID: 3833404
  • Book
  • January 2017
  • Region: Global
  • 492 Pages
  • Elsevier Science and Technology
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III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.

  • Contains the latest breakthrough research in III-nitride optoelectronics
  • Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices
  • Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

Please Note: This is an On Demand product, delivery may take up to 11 working days after payment has been received.

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1. Materials Challenges of AlGaN-Based UV Optoelectronic Devices M.H. Crawford 2. Development of Deep UV LEDs and Current Problems in Material and Device Technology M. Shatalov, R. Jain, T. Saxena, A. Dobrinsky and M. Shur 3. Growth of High-Quality AlN on Sapphire and Development of AlGaN Based Deep-Ultraviolet Light-Emitting Diodes H. Hirayama 4. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors T. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder and R.D. Dupuis 5. Al(Ga)N Nanowire Deep Ultraviolet Optoelectronics S. Zhao and Z. Mi 6. Growth and Structural Characterization of Self-Nucleated III-Nitride Nanowires T. Auzelle and B. Daudin 7. Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy S. Albert, A.M. Bengoechea-Encabo, M.Á. Sánchez-García and E. Calleja 8. InN Nanowires: Epitaxial Growth, Characterization, and Device Applications S. Zhao and Z. Mi 9. Dynamic Atomic Layer Epitaxy of InN on/in GaN and its Application for Fabricating Ordered Alloys in Whole III-N System K. Kusakabe and A. Yoshikawa 10. Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light Applications S. Gwo, Y.-J. Lu, H.-W. Lin, C.-T. Kuo, C.-L. Wu, M.-Y. Lu and L.-J. Chen 11. III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) Silicon P. Bhattacharya, A. Hazari, S. Jahangir, W. Guo and T. Frost 12. Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Hetero-Integrated on Silicon C. Bayram and R. Liu
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