Global Next Generation Memory Market 2017-2021 - Product Image

Global Next Generation Memory Market 2017-2021

  • ID: 4199036
  • Report
  • Region: Global
  • 70 pages
  • TechNavio
OFF
1h Free Analyst Time

Speak directly to the analyst to clarify any post sales queries you may have.

1 of 5

FEATURED COMPANIES

  • Adesto Technologies
  • Cypress Semiconductor
  • Fujitsu
  • Intel
  • ROHM Semiconductor
  • Texas Instruments
  • MORE
Next-generation memories include the latest developments in the memory industry such as ferroelectric random-access memory (FeRAM), phase-change memory (PCM), resistive random-access memory (ReRAM), and magnetic random-access memory (MRAM). The MRAM segment includes spin-transfer torque random-access memory (STT-MRAM). Next-generation memories are usually nonvolatile in nature.

The analysts forecast the global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.

Covered in this report

The report covers the present scenario and the growth prospects of the global next generation memory market for 2017-2021. To calculate the market size, the report considers revenue generated from the sales of nonvolatile memory (NVM) technologies implemented in the different application segments.

The market is divided into the following segments based on geography:

- Americas
- APAC
- EMEA

The report, Global Next Generation Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
- Cypress Semiconductor
- Fujitsu
- Intel
- IBM
- Micron Technology
- ROHM Semiconductor
- Samsung Electronics
- Texas Instruments
- Toshiba

Other prominent vendors
- Adesto Technologies
- Crossbar
- Everspin Technologies

Market drivers
- Growing demand for FeRAM in automotive applications.
- For a full, detailed list, view the full report

Market challenges
- Cyclical nature of consumer electronics industry.
- For a full, detailed list, view the full report

Market trends
- Growing emergence of new FeRAM design using CMOS processes.
- For a full, detailed list, view the full report

Key questions answered in this report
- What will the market size be in 2021 and what will the growth rate be?
- What are the key market trends?
- What is driving this market?
- What are the challenges to market growth?
- Who are the key vendors in this market space?
- What are the market opportunities and threats faced by the key vendors?
- What are the strengths and weaknesses of the key vendors?

You can request one free hour of the analyst’s time when you purchase this market report. Details are provided within the report.
READ MORE
Note: Product cover images may vary from those shown
2 of 5

FEATURED COMPANIES

  • Adesto Technologies
  • Cypress Semiconductor
  • Fujitsu
  • Intel
  • ROHM Semiconductor
  • Texas Instruments
  • MORE
PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction
  • Key market highlights
PART 05: Emerging memory technologies

PART 06: Supply chain

PART 07: Market landscape
  • Market overview
  • Market size and forecast
  • Five forces analysis
PART 08: Market segmentation by product
  • Global next-generation memory market by product
  • Global next-generation memory market by FeRAM
  • Global next-generation memory market by MRAM
  • Global next-generation memory market by ReRAM
  • Global next-generation memory market by PCM
PART 09: Market segmentation by application
  • Global next-generation memory market by application
  • Global next-generation memory market by cellphones
  • Global next-generation memory market by enterprise storages
  • Global next-generation memory market by industrial and automotive sectors
  • Global next-generation memory market by mass storages
  • Global next-generation memory market by smartcards and embedded MCUs
PART 10: Geographical segmentation
  • Next-generation memory market in Americas
  • Next-generation memory market in APAC
  • Next-generation memory market in EMEA
PART 11: Decision framework

PART 12: Drivers and challenges
  • Market drivers
  • Impact of drivers on key customer segments
  • Market challenges
  • Impact of challenges on key customer segments
PART 13: Market trends
  • Increasing emergence of other new technologies
  • Growing emergence of new FeRAM design using CMOS processes
  • Rising popularity of smart meters
  • Increasing development of high-speed FeRAM
PART 14: Vendor landscape
  • Competitive scenario
PART 15: Key vendor analysis
  • Other prominent vendors
PART 16: Appendix
  • List of abbreviations
List of Exhibits

Exhibit 01: Classification of semiconductor memory technologies
Exhibit 02: Basic MRAM cell structure
Exhibit 03: Basic STT-MRAM
Exhibit 04: Basic architecture of FeRAM
Exhibit 05: Basic PCRAM cell structure
Exhibit 06: Comparison of emerging major NVM
Exhibit 07: Device industry: Value chain
Exhibit 08: Global next-generation memory market: Overview
Exhibit 09: Global next-generation memory market 2016-2021 ($ millions)
Exhibit 10: Five forces analysis
Exhibit 11: Global next-generation memory market by product 2016-2021 (share)
Exhibit 12: Global next-generation memory market: Revenue trend line by product 2016-2021 ($ millions)
Exhibit 13: Global next-generation memory market by FeRAM 2016-2021 ($ millions)
Exhibit 14: Global next-generation memory market by MRAM 2016-2021 ($ millions)
Exhibit 15: Global next-generation memory market by ReRAM 2016-2021 ($ millions)
Exhibit 16: Global next-generation memory market by PCM 2016-2021 ($ millions)
Exhibit 17: Global next-generation memory market: Segmentation by application 2016-2021 (share)
Exhibit 18: Global next-generation memory market: Revenue trend-line by application 2016-2021 ($ millions)
Exhibit 19: Global next-generation memory market by cellphones 2016-2021 ($ millions)
Exhibit 20: Global next-generation memory market by enterprise storages 2016-2021 ($ millions)
Exhibit 21: Global next-generation memory market by industrial and automotive sectors 2016-2021 ($ millions)
Exhibit 22: Global next-generation memory market by mass storages 2016-2021 ($ millions)
Exhibit 23: Global next-generation memory market by smartcards and embedded MCUs 2016-2021 ($ millions)
Exhibit 24: Global next-generation memory market: Geographical segmentation 2016-2021 (share)
Exhibit 25: Global next-generation memory market: Revenue trend-line by geography 2016-2021 ($ millions)
Exhibit 26: Next-generation memory market in Americas 2016-2021 ($ millions)
Exhibit 27: Next-generation memory market in APAC 2016-2021 ($ millions)
Exhibit 28: Next-generation memory market in EMEA 2016-2021 ($ millions)
Exhibit 29: Global automotive unit production 2016-2021 (millions of units)
Exhibit 30: Basic block diagram of EDR
Exhibit 31: Global shipments of smartphones and tablets 2016-2021 (millions of units)
Exhibit 32: Impact of drivers
Exhibit 33: Global semiconductor market trend 1990-2016 ($ billions)
Exhibit 34: Impact of challenges
Exhibit 35: Other new technologies in the memory market
Exhibit 36: New opportunities for vendors 2016-2021
Exhibit 37: Other prominent vendors
Note: Product cover images may vary from those shown
3 of 5

Loading
LOADING...

4 of 5

FEATURED COMPANIES

  • Adesto Technologies
  • Cypress Semiconductor
  • Fujitsu
  • Intel
  • ROHM Semiconductor
  • Texas Instruments
  • MORE
New Report Released: - Global Next Generation Memory Market 2017-2021

The author of the report recognizes the following companies as the key players in the global next generation memory market: Cypress Semiconductor, Fujitsu, Intel, IBM, Micron Technology, ROHM Semiconductor, Samsung Electronics, Texas Instruments, and Toshiba.

Other Prominent Vendors in the market are: Adesto Technologies, Crossbar, and Everspin Technologies.

Commenting on the report, an analyst from the research team said: “One trend in market is growing emergence of new FeRAM design using CMOS processes. Researchers have designed flexible FeRAM devices using state-of-the-art CMOS processes that involve sputtering, photolithography, and reactive ion etching. Their research led to a reduction in the gap between a rigid, inflexible semiconductor, which has high integration density, performance, and yield, and highly flexible polymer/hybrid materials that are low-performance electronics. To reduce the thickness of traditional silicon wafers and make electronics flexible, researchers used the existing standard CMOS fabrication processes.”

According to the report, one driver in market is low power consumption. Next-generation memory technologies are mostly used in battery-powered wireless sensors, as they consume approximately 50% less power than other flash memories. This increases the battery life, leading to a reduction in maintenance costs. Thus, vendors in the market get the advantage to compete based on prices. Moreover, due to lesser power consumptions, users prefer buying devices integrated with the next-generation memory technologies as their expenses also get reduced. In addition, next-generation memory technologies have the unique feature of a faster wake-up time. They also eliminate the need for data saving and restoring, unlike other flash memories. This gives next-generation memory technologies an additional benefit over other RAMs, along with the advantage of lower power consumption. Next-generation memory technologies help in the automatic update of systems, especially in wireless applications. All these factors attract device manufacturers and end-users, which will drive the adoption of these technologies during the forecast period.

Further, the report states that one challenges in market is cyclical nature of semiconductor industry. The cyclical nature of the semiconductor equipment industry affects operating results of equipment vendors due to severe downturns. The equipment manufacturers face risks such as overcapacity, low demand, and high price competition. Changes in customer requirements due to new manufacturing capacity and advances in technology affect equipment manufacturers considerably. Semiconductor manufacturing equipment vendors are largely affected by their capital expenditure. Device manufacturers reduce their capital expenditure and demand for semiconductor manufacturing equipment during the overcapacity period. During the cyclical period, there is a reduction in purchases, delay in delivery dates, and order cancellations by customers. This, in turn, results in reduction of net sales, backlogs, delays in revenue recognition, and excess inventory for the vendors, which poses a major threat to vendors’ operations. In addition, the high price competition due to their low demand in the market affects their gross margins.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
Note: Product cover images may vary from those shown
5 of 5
  • Cypress Semiconductor
  • Fujitsu
  • Intel
  • IBM
  • Micron Technology
  • ROHM Semiconductor
  • Samsung Electronics
  • Texas Instruments
  • Toshiba
  • Adesto Technologies
  • Crossbar
  • Everspin Technologies
Note: Product cover images may vary from those shown
6 of 5
Note: Product cover images may vary from those shown
Adroll
adroll