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Innovations in Next-gen Data Storage, Semiconductors, and Microprocessors

  • ID: 4244599
  • Report
  • April 2017
  • Region: Global
  • 15 pages
  • Frost & Sullivan
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This issue of Microelectronics TOE covers recent developments in next-gen data storage, semiconductors, and microprocessors. Innovations profiled include skyrmions for next-gen data storage and processing by the National University of Singapore (NUS), development of reduced graphene oxide (rGO) electronics by the North Carolina State University, semiconductor material suitable for optoelectronic devices by the University of Southern California (USC), molybdenum disulphide-based microprocessors by the Vienna University of Technology, and a silicon on insulator substrate for gallium nitride components by the Aalto University.

The Microelectronics TechVision Opportunity Engine (TOE) captures global electronics-related innovations and developments on a weekly basis. Developments are centred on electronics attributed by low power and cost, smaller size, better viewing, display and interface facilities, wireless connectivity, higher memory capacity, flexibility and wearables. Research focus themes include small footprint lightweight devices (CNTs, graphene), smart monitoring and control (touch and haptics), energy efficiency (LEDs, OLEDs, power and thermal management, energy harvesting), and high speed and improved conductivity devices (SiC, GaN, GaAs).

Miniaturization, a move toward lower power consumption, and the need for enhanced features are driving innovations in the electronics sector. Technology focus areas include semiconductor manufacturing and design, flexible electronics, 3D integration/IC, MEMS and NEMS, solid state lighting, advanced displays, nanoelectronics, wearable electronics, brain computer interface, advanced displays, near field communication, and next generation data storage or memory.
Note: Product cover images may vary from those shown
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Recent Developments in Next-gen data storage, Semiconductors, and Microprocessors:
  • Skyrmions for Next-Gen Data Storage and Processing
  • Development of Reduced Graphene Oxide (rGO) Electronics
  • Semiconductor Material suitable for Optoelectronic devices
  • Molybdenum Disulphide-based Microprocessors
  • Silicon on Insulator Substrate for Gallium Nitride Components
  • Industry Contacts
Note: Product cover images may vary from those shown
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