The two LED dies are based on the same technology: an AlN template layer deposited on a sapphire substrate. The AlGaN active layers are epitaxied on the AlN layer, but the thickness is very different between the two dies. The SS35DF227513 is manufactured using the latest SETi technological evolution. The new AlN and AlGaN structure reduces the defect density to enhance external quantum efficiency. At 1mm², the SS35DF227513 is 9x taller than SETi’s first UVC LED and boasts 15x more power.
The TO39 with a hemispherical lens is an expensive package, but it is destined for instrumentation. The new SMD3535 package in the SS35DF227513’s ceramic is cheaper and designed for disinfection with a large viewing angle and better thermal resistance that allows continuous use of the 1mm² LED.
This report delivers a deep technology analysis of the packaging and the components, with images of the complex AlN and AlGaN epitaxy layer stack and electrode structure. Also included are a production cost analysis and an overall comparison with the first SETi UVC LED.
Manufacturing Process Flow
Supply Chain Evaluation
Manufacturing Cost Analysis
Selling Price Estimation
Comparison with Capacitive Fingerprint Sensor