+353-1-416-8900REST OF WORLD
+44-20-3973-8888REST OF WORLD
1-917-300-0470EAST COAST U.S
1-800-526-8630U.S. (TOLL FREE)


Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis

  • ID: 4316337
  • Report
  • Region: Global
  • 94 pages
  • System Plus Consulting
1 of 2
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.

The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.

The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.

The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.

It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
Note: Product cover images may vary from those shown
2 of 2
Detailed Photos

Precise Measurements

Material Analysis

Manufacturing Process Flow

Supply Chain Evaluation

Manufacturing Cost Analysis

Selling Price Estimation

Comparison with Capacitive Fingerprint Sensor
Note: Product cover images may vary from those shown
3 of 2