The SiC C3M™ Platform includes three devices at different currents, assembled in two packages. This report presents a deep analysis of the C3M0280090 device and an overview of C3M0120090D and C3M0065090D assembled in a TO220 package. Moreover, this report studies the potential evolution of the device’s cost over the next five years according to technology and market trends.
Also included is a comparison with previous Cree SiC MOSFET generations and a cost comparison with Infineon’s Si SJ MOSFET and GaN Systems’ GaN HEMT.
Manufacturing Process Flow
Supply Chain Evaluation
Manufacturing Cost Analysis
Selling Price Estimation
Comparison with Capacitive Fingerprint Sensor