The CGHV40100 includes a single GaN-on-SiC HEMT die with an area of 4.17mm2. To make the source connection, the device is manufactured on ultra-thin wafer with gold vias. The HEMT shows the typical GaN epitaxy structure for lateral device and a source-connected field plate.
The device is assembled in a SOT467C package with ceramic substrate materials that possess0an excellent combination of electrical, mechanical, and thermal properties. The flange material is CuMoCu heatsink, which has good mechanical properties but is quite expensive. Very specific and optimized choices went into the device’s design and manufacturing, resulting in a competitive, stunning product.
This report also includes complete chip and module fabrication process overviews, and an estimated cost.