The EPC2040 is a GaN-on-silicon HEMT (High Electron Mobility Transistor) designed by EPC, manufactured by Episil and supplied in passivated bare die form with solder balls. The wafer level package is well suited for high frequency functions with low inductive parasitic levels. WLCSP (Wafer Level Chip Scale Packaging) produces a small die, at just 0.85mm x 1.20mm, at low packaging cost.
The EPC2040 is manufactured with the latest EPC technology. The new gate structure reduces gate leakage and the metal contact has been enhanced. Moreover we observe a very thin epitaxy layer to reduce the cost.
The report presents deep technology analysis of the packaging and components with images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with the first EPC GaN HEMT 15V eGaN FET for LiDAR Systems
Manufacturing Process Flow
Supply Chain Evaluation
Manufacturing Cost Analysis
Selling Price Estimation
Comparison with Capacitive Fingerprint Sensor