Global IGCT Market 2017-2021

  • ID: 4339910
  • Report
  • Region: Global
  • 62 pages
  • TechNavio
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FEATURED COMPANIES

  • ABB
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • MORE
About IGCT

IGCT can be described as a power semiconductor electronic device that is used in industrial equipment to switch electric current. IGCT is related to the gate turn-off (GTO) thyristor, a special type of thyristor, which is a high-power semiconductor device. Like the GTO thyristor, IGCT is a power switch that is fully controllable, i.e., it can be turned both on and off by its control terminal (the gate).

The analysts forecast the global IGCT market to grow at a CAGR of 6.04% during the period 2017-2021.

Covered in this report
The report covers the present scenario and the growth prospects of the global IGCT market for 2017-2021. To calculate the market size, the report considers shipments, sales, volume, and value.

The market is divided into the following segments based on geography:
  • Americas
  • APAC
  • EMEA
The report, Global IGCT Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
  • ABB
  • Infineon Technologies
  • Mitsubishi Electric
Other prominent vendors
  • ON Semiconductor
  • Tianjin Century Electronics
Market drivers
  • Increasing demand for power electronic devices
  • For a full, detailed list, view the full report
Market challenges
  • Wide bandgap (WBG) semiconductor materials
  • For a full, detailed list, view the full report
Market trends
  • Increased demand for silica gel coating
  • For a full, detailed list, view the full report
Key questions answered in this report
  • What will the market size be in 2021 and what will the growth rate be?
  • What are the key market trends?
  • What is driving this market?
  • What are the challenges to market growth?
  • Who are the Key vendors in this market space?
  • What are the market opportunities and threats faced by the key vendors?
  • What are the strengths and weaknesses of the key vendors?
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Note: Product cover images may vary from those shown
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FEATURED COMPANIES

  • ABB
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • MORE
PART 01: Executive summary

PART 02: Scope of the report

PART 03: Introduction
  • Key market highlights
  • Market overview
PART 04: Market landscape
  • Market size and forecast
  • Five forces analysis
PART 05: Market segmentation by application
  • Global IGCT market by application
  • Converters
  • Industrial drives
PART 06: Geographical segmentation
  • Global IGCT market by geography
  • APAC
  • EMEA
  • Americas
PART 07: Decision Framework

PART 08: Drivers and challenges
  • Market drivers
  • Impact of drivers on key customer segments
  • Market challenges
  • Impact of challenges on key customer segments
PART 09: Market trends
  • Availability of next generation of IGCT with high power technology
  • Increased demand for silica gel coating
  • Full integration with bi-mode gate commutated thyristor (BGCT)
PART 10: Vendor landscape
  • Competitive scenario
  • Other prominent vendors
PART 11: Key vendor analysis
  • ABB
  • Infineon Technologies
  • Mitsubishi Electric
PART 12: Appendix
  • List of abbreviations
List of Exhibits
Exhibit 01: Comparison of advantages, disadvantages, and applications of GTO, IGBT, and IGCT
Exhibit 02: Global IGCT market
Exhibit 03: Global IGCT market 2016-2021 ($ millions)
Exhibit 04: Five forces analysis
Exhibit 05: Global IGCT market by application
Exhibit 06: Global IGCT market by application 2016-2021 (% share of revenue)
Exhibit 07: Global IGCT market by converters 2016-2021 ($ millions)
Exhibit 08: Global IGCT market by converters: Segmentation by type 2016 (% share of revenue)
Exhibit 09: Growth rate of installed capacity of wind power worldwide from 1997-2016
Exhibit 10: Global IGCT market by industrial drives application 2016-2021 ($ millions)
Exhibit 11: IGCT used in different industrial drives 2016
Exhibit 12: Global IGCT market by geography 2016 (% share of revenue)
Exhibit 13: Global IGCT market by geography 2016-2021 (% share of revenue)
Exhibit 14: IGCT market in APAC 2016-2021 ($ millions)
Exhibit 15: Global electric vehicle sales 2011-2016 (units in thousands)
Exhibit 16: IGCT market in EMEA 2016-2021 ($ millions)
Exhibit 17: IGCT market in Americas 2016-2021 ($ millions)
Exhibit 18: Monthly unit sales of automobiles in the US Jan 2013-Nov 2016 (millions)
Exhibit 19: Global installed capacity of renewable energy sources 2012-2016
Exhibit 20: Impact of drivers
Exhibit 21: Impact of challenges
Exhibit 22: Percentage share of the key vendors in the market 2016
Exhibit 23: Other prominent vendors
Exhibit 24: Recent developments: Infineon Technologies
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FEATURED COMPANIES

  • ABB
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • MORE
New Report Released: – Global IGCT Market 2017-2021

The author of the report recognizes the following companies as the key players in the global IGCT market: ABB, Infineon Technologies, and Mitsubishi Electric.

Other Prominent Vendors in the market are: ON Semiconductor, and Tianjin Century Electronics.

Commenting on the report, an analyst from the research team said: “One trend in the market is increased demand for silica gel coating. A growing trend among IGCTs is silica gel coating. Silica gel is used as a coolant in as IGCTs generate a lot of heat during operations. This is done to avoid disconnection between the IGCT chip, and the bonding wire. The environmental temperature of the IGCT chips should be kept in the range of -40⁰C to 55⁰C.”

According to the report, one driver in the market is increasing demand for power electronic devices. Power ICs are commonly used for high-frequency range, high power amplification, and microwave radiation applications. The growth of power ICs in fields such as industrial, ICT, and aerospace and defense applications can be attributed to several high-power and high-frequency applications such as radio frequency (RF) communication, high-frequency wireless communication, satellite communication, and electronic warfare.

Further, the report states that one challenge in the market is wide bandgap (WBG) semiconductor materials. WBG semiconductor materials are materials that allow devices to perform at high voltages, high temperatures, and high switching frequencies. WBG materials such as silicon carbide (SiC) and gallium nitride (GaN) have good thermal conductivity, and these can be exploited in power semiconductor devices. These WBG materials are considered more efficient than the existing silicon devices because operating at high temperature eradicates the need for outer cooling, and higher switching frequencies result in lesser noise.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
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  • ABB
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • Tianjin Century Electronics
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown
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