Materials Reliability in Microelectronics VI : Volume 428. MRS Proceedings

  • ID: 4372196
  • Book
  • 583 Pages
  • Cambridge University Press
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MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
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J. Joseph Clement DIGITAL Equipment Corporation, Massachusetts.

William F. Filter
Patrick M. Lenahan Pennsylvania State University.

Anthony S. Oates
Robert Rosenberg IBM T J Watson Research Center, New York.
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