Global Next Generation Transistor Market - By Type , Material, Applications, Geography, Trends, Forecast - 2017 - 2022

  • ID: 4390030
  • Report
  • Region: Global
  • 133 pages
  • Mordor Intelligence
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In many electronic circuits transistors have a key role, in which they are usually used either as a switch or an amplifier. Semiconductor nanomaterial are used to make these new age transistors channels. This market is anticipated to see a double digit compounded annual growth rate over the next five years.

It is expected that 3D Transistors is set to become the standard because is a novel transistor that is manufactured by using Nano wires in comparison to conventional usage of silicon. The growth of 3D Transistors is likely to alter the dynamics of semiconductor production industry. 3D transistors manufacturing process involves top-down method, wherein components of the transistor are engraved on the transistor's base. The Nano wires, made of gallium, iridium as well as arsenide semiconductors, are coated with a thinner dielectric made of lanthanum aluminate for executing the gate operation effectively with decreased voltage requirements.

Market segmentation is done on the basis of type, material, application and geography. According to type, the market is segmented into Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), High Electron Mobility Transistor (HEMT), InAs Nanowire MOSFET (NWFET), Hetero junction Bipolar Transistor (HBT), and Others. On the basis of material, segmentation is done into Gallium Nitride (GaN), Indium Arsenide (InAs), Indium Phosphide (InP), Gallium Arsenide (GaAs). It has many applications which include Microwave systems, Aerospace, 3D-Enabled Smartphones, Satellite, Netbooks, Ultrabooks and Media Tablets. Geographically, the Global Next Generation Transistor Market has been segmented into five regions, namely, North America, Europe, Asia-Pacific, Middle East and Africa (MEA) and Latin America.

The major market players in the next generation transistor market include ST Microelectronics, Infineon Technologies, Texas Instruments, Avago Technologies, Focus Microwave, Advance Linear Devices, Inc., TriQuint Semiconductor, Axcera, Deveo Oy, Fairchild Semiconductors.
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1. Introduction
1.1 Study Deliverables
1.2. Key Findings of the Study
1.3 Research Methodology
1.4 Research Assumptions
1.5 Market Definition
2. Executive Summary
3. Market Dynamics
3.1 Market Overview
3.2 Market Drivers
3.2.1 Technology Advancements Leading to Demand for Increasing Device Densities
3.2.2 Need for High Performance and Low-Power Electronics
3.2.3 Increasing Implementation of 3D Applications in Consumer Electronics
3.3 Market Restraints
3.3.1 Reducing Size Leads To Difficulties Associated with Leakage Current
3.3.2 High Cost of Independent Raw Materials and Technology
3.4 Industry Attractiveness - Porter's Five Forces Analysis
3.4.1 Bargaining Power of Suppliers
3.4.2 Bargaining Power of Consumers
3.4.3 Threat from New Entrants
3.4.4 Threat from Substitute Products
3.4.5 Competitive Rivalry within the Industry
3.5 Industry Value-Chain Analysis
3.6 Industry Policies
4. Global Next Generation Transistors Market Segmentation and Forecast
4.1 By Type
4.1.1 High Electron Mobility Transistor (HEMT)
4.1.2 Bipolar Junction Transistor (BJT)
4.1.3 Field Effect Transistors (FET)
4.1.4 Multiple Emitter Transistor (MET)
4.1.5 Dual Gate Metal Oxide Semiconductor Field Effective Transistor
4.1.6 Others
4.2 By Material
4.2.1 Laterally Diffused Metal Oxide Semiconductor (LDMOS)
4.2.2 Gallium Arsenide (GaAs)
4.2.3 Gallium Nitride (GaN)
4.2.4 Indium Arsenide (InAs)
4.2.5 Indium Phosphide (InP)
4.2.6 Others
4.3 By Applications
4.3.1 Aerospace and Defense
4.3.2 Industrial
4.3.3 Telecommunications
4.3.4 Consumer Electronics
4.3.5 Others
4.4 By Region
4.4.1 North America
4.4.2 Europe
4.4.3 Asia-Pacific
4.4.4 Latin America
4.4.5 Middle East and Africa
5. Vendor Market Share Analysis
6. Competitive Intelligence – Company Profiles
6.1 NXP Semiconductors N.V.
6.1.1 Overview
6.1.2 Major Products and Services
6.1.3 Company Financials
6.1.4 Recent Developments
6.2 Infineon Technologies AG
6.2.1 Overview
6.2.2 Major Products and Services
6.2.3 Company Financials
6.2.4 Recent Developments
6.3 ST Microelectronics
6.3.1 Overview
6.3.2 Major Products and Services
6.3.3 Company Financials
6.3.4 Recent Developments
6.4 Texas Instruments Inc.
6.4.1 Overview
6.4.2 Major Products and Services
6.4.3 Company Financials
6.4.4 Recent Developments
6.5 Avago Technologies Ltd.
6.5.1 Overview
6.5.2 Major Products and Services
6.5.3 Company Financials
6.5.4 Recent Developments
6.6 Fairchild Semiconductor International, Inc.
6.6.1 Overview
6.6.2 Major Products and Services
6.6.3 Company Financials
6.6.4 Recent Developments
6.7 Vishay Intertechnology, Inc.
6.7.1 Overview
6.7.2 Major Products and Services
6.7.3 Company Financials
6.7.4 Recent Developments
6.8 Microchip Technology, Inc.
6.8.1 Overview
6.8.2 Major Products and Services
6.8.3 Company Financials
6.8.4 Recent Developments
6.9 International Rectifier Corporation
6.9.1 Overview
6.9.2 Major Products and Services
6.9.3 Company Financials
6.9.4 Recent Developments
6.10 Power Integrations, Inc.
6.10.1 Overview
6.10.2 Major Products and Services
6.10.3 Company Financials
6.10.4 Recent Developments
6.11 Samsung Semiconductor, Inc.
6.11.1 Overview
6.11.2 Major Products and Services
6.11.3 Company Financials
6.11.4 Recent Developments
6.12 Taiwan Semiconductor Manufacturing Company
6.12.1 Overview
6.12.2 Major Products and Services
6.12.3 Company Financials
6.12.4 Recent Developments
6.13 GlobalFoundries
6.13.1 Overview
6.13.2 Major Products and Services
6.13.3 Company Financials
6.13.4 Recent Developments
6.14 Intel Corporation
6.14.1 Overview
6.14.2 Major Products and Services
6.14.3 Company Financials
6.14.4 Recent Developments
7. Investment Analysis
7.1 Recent Mergers & Acquisitions
7.2 Investment Scenario & Opportunities
8. Future of the Global Next-Generation Transistors Market
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