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Group IV Semiconductor Nanostructures 2006: Volume 958. MRS Proceedings

  • ID: 4425189
  • Book
  • March 2007
  • 311 Pages
  • Cambridge University Press
This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.
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Leonid Tsybeskov New Jersey Institute of Technology.

David J. Lockwood
Christophe Delerue
Masakazu Ichikawa University of Tokyo.

Anthony W. van Buuren Lawrence Livermore National Laboratory, California.
Note: Product cover images may vary from those shown