GaN and Related Alloys 2000: Volume 639. MRS Proceedings

  • ID: 4425231
  • Book
  • 967 Pages
  • Cambridge University Press
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This year's nitride proceedings provides an integrated view of advances in both the basic sciences and the technology of group-III nitride electronic and optoelectronic devices. The devices discussed include high-frequency, high-power, and high-temperature devices as well as light-emitting diodes, laser diodes, and UV photodetectors. Challenges and goals for the advancement of this field include the further optimization and stabilization of growth processes, and growth of GaInN, AlGaN, AlInN, and quaternary layers. The book captures the most exciting developments of this field, and should prove useful for both researchers and students of this novel science and technology. Topics include: advances in growth; advanced alloys and characterization; growth and characterization; dopants and processing; lateral epitaxy and growth; optical properties and light emitters; electronic transport and quantum dots; characterization and bandstructure; quantum dots and photo detectors; electronic properties and transport; light emitters and strain control and light emitters and electronic devices.
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Christian Wetzel
Michael S. Shur Rensselaer Polytechnic Institute, New York.

Umesh K. Mishra University of California, Santa Barbara.

Bernard Gil Université de Montpellier II.

Katsumi Kishino Sophia University, Tokyo.
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown
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