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Rare-Earth Doping of Advanced Materials for Photonic Applications 2011: Volume 1342. MRS Proceedings

  • ID: 4425246
  • Book
  • November 2011
  • Region: Global
  • 132 Pages
  • Cambridge University Press
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Symposium V, 'Rare-Earth Doping of Advanced Materials for Photonic Applications', Spring Meeting, Materials Research Society, San Francisco, April 25−29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
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Part I - ZnO, GaN, Phosphors:
1. Rare earth materials challenge to national defense: material scientist's perspective Shiva Hullavarad;
2. Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Atsushi Nishikawa;
3. Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy Shuichi Emura;
4. Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy Jonathan Poplawsky;
5. Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation Bertrand Lacroix;

Part II - Insulating Materials: Lasers and Phosphors:
6. Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloids Darayas Patel;
7. Preparation of luminescent inorganic core/shell-structured nanoparticles Moritz Milde;
8. Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 µm optical amplication applications Christophe Galindo;
9. Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+,Eu3+ material Anna Dobrowolska;
10. Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolites Zhenhua Bai;
11. Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applications Miroslaw Batentschuk;
12. Photostimulable fluorescent nanoparticles for biological imaging Andres Osvet;
13. Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substrates Steve Smith;

Part III - Rare Earth Ions in Group III - Nitrides:
14. Ultraviolet light emitting devices using AlGdN Takashi Kita;
15. Theoretical investigation of Er-O co-doping in hexagonal GaN Simone Sanna;
16. Photoluminescence of Eu-doped GaN Kevin O'Donnell;
17. Site selective magneto-optical studies of Eu ions in gallium nitride Nathaniel Woodward.
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Volkmar Dierolf Lehigh University, Pennsylvania.

Yasufumi Fujiwara University of Osaka, Japan.

Tom Gregorkiewicz Universiteit van Amsterdam.

Wojciech M. Jadwisienczak Ohio University.
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