Characterization of Wide Bandgap Power Semiconductor Devices. Energy Engineering - Product Image

Characterization of Wide Bandgap Power Semiconductor Devices. Energy Engineering

  • ID: 4459676
  • Book
  • IET Books
1 of 4

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.

Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Note: Product cover images may vary from those shown
2 of 4
  • Chapter 1: Introduction
  • Chapter 2: Pulsed static characterization
  • Chapter 3: Junction capacitance characterization
  • Chapter 4: Fundamentals of dynamic characterization
  • Chapter 5: Gate drive for dynamic characterization
  • Chapter 6: Layout design and parasitic management
  • Chapter 7: Protection design for double pulse test
  • Chapter 8: Measurement and data processing for dynamic characterization
  • Chapter 9: Cross-talk consideration
  • Chapter 10: Impact of three-phase system
  • Chapter 11: Topology consideration
  • Appendix A: Recommended equipment and components list for DPT setup
  • Appendix B: Data processing code for dynamic characterization
Note: Product cover images may vary from those shown
3 of 4

Loading
LOADING...

4 of 4
Fei Wang Professor.
University of Tennessee, Knoxville, USA.

Fei (Fred) Wang is Professor of Electrical Engineering and Condra Chair of Excellence in Power Electronics, and Technical Director of NSF/DOE Engineering Research Center CURENT at The University of Tennessee, Knoxville, USA. He also holds a joint appointment with Oak Ridge National Lab. Prof. Wang has published over 400 journal and conference papers, authored 3 book chapters, and holds 15 US patents. He is a fellow of IEEE and NAI.

Zheyu Zhang Lead Power Electronics Engineer.
General Electric Global Research, USA.

Zheyu Zhang is a Lead Power Electronics Engineer with General Electric Global Research. He was a Research Assistant Professor at the University of Tennessee, Knoxville from 2015 to 2018. He has published over 60 papers in the most prestigious journals and conference proceedings, four patent applications with one licensed, and two IEEE tutorial seminars. He was the recipient of two IEEE prize paper awards.

Edward A. Jones Senior Applications Engineer.
Efficient Power Conversion Corporation, USA.

Edward A. Jones is a Senior Applications Engineer with Efficient Power Conversion Corporation. He completed his Ph.D. at The University of Tennessee, where he was a Chancellor's Fellow, a CURENT Fellow, and a Bredesen Energy Sciences and Engineering Fellow. He has published over 20 peer-reviewed IEEE papers, an IEEE tutorial seminar, and a patent.

Note: Product cover images may vary from those shown
5 of 4
Note: Product cover images may vary from those shown
Adroll
adroll