Wolfspeed C2M 1200V SiC MOSFET C2M0025120D Complete Teardown Report

  • ID: 4471576
  • Report
  • Region: Global
  • 75 Pages
  • System Plus Consulting
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The Market Outlook for SiC Devices is Promising with a Compound Annual Growth Rate of 28% from 2016 to 2020


  • Cree
  • STMicroelectronics
  • Wolfspeed
  • MORE

SiC MOSFET penetration in industrial applications is expanding, but not as fast as it could. The market outlook for SiC devices is promising with a compound annual growth rate of 28% from 2016 to 2020. This will increase to 40% from 2020 to 2022 due to growth in industrial applications.

Therefore, the total SiC market will exceed $1B in 2022. But high manufacturing costs and integration problems are slowing the market integration process.

Wolfspeed offers a complete series of SiC products from 900V up to 1700V using Cree, which it used to be part of, for all of its supply needs. Differently to other manufacturers like Rohm, which uses trench structure for 1200V and planar for 1700V products, Wolfspeed uses planar structure for all the voltages. Moreover, Cree enables a unique triple implantation process and a silicide source contact to improve contact resistance.

The C2M0025120D is a 1200V SiC MOSFET from Wolfspeed. It is marketed for industrial power supplies in uses such as motor drives, as well as photovoltaics, uninterruptible power supplies, battery charging and energy storage systems.  The device offers a low on-resistance of 25mΩ but very high current density of 3.5 A/mm². It integrates the second generation high-voltage SiC planar power MOSFET dies that achieve 90A current.

Thanks to the die design the device’s cost is very competitive. The gate structure is very simple, and the packaging is optimized to save costs.

The report presents a deep technology analysis of the package and components, with images of the planar SiC structure.

It also includes comparisons with Rohm and STmicroelectronics’ SiC MOSFETs and 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.

Note: Product cover images may vary from those shown
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  • Cree
  • STMicroelectronics
  • Wolfspeed
  • MORE

1. Introduction
Executive Summary
Reverse Costing Methodology
SiC Power Device Market

2. Company Profile
Supply Chain

3.Physical Analysis
Summary of the Physical Analysis
Package Analysis
Package opening
Package cross-section
MOSFET die view and dimensions
MOSFET delayering and main blocks
MOSFET die process
MOSFET die cross-section
MOSFET die process characteristic
Manufacturing Process
MOSFET die front-end process
MOSFET fabrication unit
Packaging process and fabrication unit

4.Cost Analysis
Summary of the Cost Analysis
Yield Explanations and Hypotheses
MOSFET die front-end cost
MOSFET die probe test, thinning and dicing
MOSFET die wafer cost
MOSFET die cost
Complete Device
Assembled components cost
Summary of the assembly
Component cost
Selling Price

Note: Product cover images may vary from those shown
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  • Cree
  • STMicroelectronics
  • Wolfspeed
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown