Power semiconductor devices are incorporated in electronic circuits to regulate the energy transfer of the system. These devices are mostly in the form of a switch, for example, switched mode power supply (SMPS) is a type of power semiconductor device. Power devices that are made of Gallium Nitride (GaN) - a semiconductor material - are called GaN power devices. GaN power device reduces the overall energy loss of the system. Unlike the conventional transistors that requires larger chip space to decrease on-resistance, GaN devices are compact in size and hence provide high speed switching and size contraction of the overall system.
The factors that drive the market growth include decline in prices, better performance as compared to SiC devices, rise in demand for GaN devices for wireless charging, an increase in installation of GaN devices in electric vehicle, and growth in requirement of GaN devices in commercial RF applications. However, a lack of availability of GaN material and preference of silicon carbide (SiC) in high-voltage semiconductor applications restrain the market growth Moreover, government initiatives in HVDC and smart grid and requirement of GaN power devices in electric and hybrid vehicle provides new opportunities for the players operating in the market are anticipated to provide numerous opportunities for market growth during the forecast period.
Increase in demand for GaN in radio frequency equipment; rise in adoption in the telecommunication industry; and A surge in demand for AC fast charger, LiDAR, and wireless power due to its advantages over silicon power devices.
The global GaN power devices market is segmented based on device, application, and region. Based on device, the market is categorized into GaN power discrete devices, GaN power ICs, and GaN power module. By application, the market is classified into consumer electronics, IT & telecommunication, automotive, aerospace & defense, and others. Geographically, it is analyzed across North America (the U.S., Mexico, and Canada), Europe (the UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, Taiwan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, the Middle East, and Africa).
The key players in the GaN power device market that are analyzed in the report are Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, and Taiwan Semiconductor Manufacturing Company. The key players adopt various key strategies for market growth such as product launch, product development, collaboration, partnership, and various other.
KEY MARKET SEGMENTS
BY Device
BY Application
By Region
Key Market Players
The factors that drive the market growth include decline in prices, better performance as compared to SiC devices, rise in demand for GaN devices for wireless charging, an increase in installation of GaN devices in electric vehicle, and growth in requirement of GaN devices in commercial RF applications. However, a lack of availability of GaN material and preference of silicon carbide (SiC) in high-voltage semiconductor applications restrain the market growth Moreover, government initiatives in HVDC and smart grid and requirement of GaN power devices in electric and hybrid vehicle provides new opportunities for the players operating in the market are anticipated to provide numerous opportunities for market growth during the forecast period.
Increase in demand for GaN in radio frequency equipment; rise in adoption in the telecommunication industry; and A surge in demand for AC fast charger, LiDAR, and wireless power due to its advantages over silicon power devices.
The global GaN power devices market is segmented based on device, application, and region. Based on device, the market is categorized into GaN power discrete devices, GaN power ICs, and GaN power module. By application, the market is classified into consumer electronics, IT & telecommunication, automotive, aerospace & defense, and others. Geographically, it is analyzed across North America (the U.S., Mexico, and Canada), Europe (the UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, Taiwan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, the Middle East, and Africa).
The key players in the GaN power device market that are analyzed in the report are Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, and Taiwan Semiconductor Manufacturing Company. The key players adopt various key strategies for market growth such as product launch, product development, collaboration, partnership, and various other.
KEY MARKET SEGMENTS
BY Device
- GaN Power Discrete Devices
- GaN Power ICs
- GaN Power Module
BY Application
- Consumer Electronics
- IT & Telecommunication
- Automotive
- Aerospace & Defense
- Others
By Region
- North America
- U.S.
- Canada
- Mexico
- Europe
- UK
- Germany
- France
- Rest of Europe
- Asia-Pacific
- China
- Japan
- Taiwan
- South Korea
- Rest of Asia-Pacific
- LAMEA
- Latin America
- Middle East
- Africa
Key Market Players
- Efficient Power Conversion Corporation (EPC)
- Fujitsu Limited
- GaN Systems
- On Semiconductors
- Panasonic Corporation
- VisIC
- Texas Instruments Inc.
- Toshiba Corporation,
- Fujitsu Limited
- Infineon Technologies AG
- Taiwan Semiconductor Manufacturing Company
Table of Contents
Chapter 1: Introduction
Chapter 2: Executive Summary
Chapter 3: Market Overview
Chapter 4: Gan Power Device Market, by Device
Chapter 5: Gan Power Device Market, by Industrial Vertical
Chapter 6: Gan Power Device Market, by Region
Chapter 7: Competitive Landscape
Chapter 8: Company Profiles
Executive Summary
The report, titled, 'GaN Power Device Market by Device and Application: Opportunity Analysis and Industry Forecast, 2020-2027' projects that the global GaN power device market size is estimated to reach $1.24 billion by 2027. In 2019, North America dominated the GaN power device market share, contributing more than 35% share of the overall revenue, followed by Europe. Furthermore, a growth in adoption GaN devices for wireless charging, across the world, propels the growth of the market. Moreover, automobile companies globally are adopting GaN power devices in electric vehicles for various applications, which fuels the global GaN power device market growth.GaN has gradually emerged as a sustainable semiconductor material in imminent power electronic converters, owing to its beneficial properties, such as wide band gap and the prospect to form hetero structures that make the optimization of the power conversion possible. Although GaN power devices market is in its initial phase, still it has surpassed the silicon counterparts. GaN is majorly applied in optical and high-speed electronic devices, and has gained considerable impetus in recent years for power electronics applications. High-voltage transistors over 600V are reported to gain a high growth rate in terms of revenue. Over the past decade, the performance of GaN power devices has been improved significantly.
GaN is preferred over other wide band gap materials such as Silicon Carbide (SiC) and Diamond as GaN devices offer similar characteristics as its counterparts at comparatively less prices. In addition, their advantageous properties such as high frequency switching and compact size drive their demand in the GaN power devices market. GaN switching devices anticipate are to replace MOSFETs in majority of the switching power supply applications in the coming years.. These advantages is expected to increase the GaN power device market size.
Consumer electronic refers to home electronics devices.. These devices are developed for everyday use. The rise in investment in R&D for charging device is lucrative to create future opportunities for GaN power device market. For instance, WiTricity Corp., demonstrated wireless charging using GaN field effect transistor (FET). Switching speed of GAN FET allows enhanced efficiency of resonant wireless power transfer as compared to silicon MOSFETs. The technology is in the initial phase of adaption in the smartphone market and is lucrative for further penetration.
Among various regions, North America was the major revenue generator in 2019, and is expected to maintain its dominance in the future. This is attributed to rapid transformation from usage of SiC Power device to GaN Power device in the latest electronics adopted in future.
Asia-Pacific is the highest revenue generating region due to availability of huge power stations for high voltage power, an increase in demand for power modules, and growth in population. Moreover, around 70% of the total electrical energy is estimated to be processed by power electronics systems that incorporate GaN devices.. These devices are extensively adopted in industry verticals such as automotive, renewable energy stations, and electric grid infrastructures.. These organizations take various initiatives to build power infrastructure with advanced technologies.
The global GaN power devices market is segmented on the basis of device, application, and region. Based on device, the market is categorized into GaN power discrete devices, GaN power ICs, and GaN power module. By application, the market is classified into consumer electronics, IT & telecommunication, automotive, aerospace & defense, and others. Region wise, it is analyzed across North America (the U.S., Mexico, and Canada), Europe (the UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, Taiwan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, the Middle East, and Africa).
Key Findings of the Study:
By device, the GaN power modules segment accounted for the highest share of the market in 2019 with $52.2 million, growing at a CAGR of 32.2% from 2020 to 2027.
On the basis of industry vertical, the IT & telecommunication segment generated the highest revenue, accounting for $36.3 million in 2019.
By region, North America is expected to dominate the GaN power devices industry, garnering 40.1% share during the forecast period.
The major companies profiled in the report include Efficient Power Conversion Corporation (EPC), GaN Systems, On Semiconductors, Panasonic Corporation, VisIC, Texas Instruments Inc., Toshiba Corporation, Fujitsu Limited, Infineon Technologies AG, and Taiwan Semiconductor Manufacturing Company.
Companies Mentioned
- Efficient Power Conversion Corporation (EPC)
- GaN Systems
- On Semiconductors
- Panasonic Corporation
- VisIC
- Texas Instruments Inc.
- Toshiba Corporation
- Fujitsu Limited
- Infineon Technologies AG
- Taiwan Semiconductor Manufacturing Company.
Methodology
The analyst offers exhaustive research and analysis based on a wide variety of factual inputs, which largely include interviews with industry participants, reliable statistics, and regional intelligence. The in-house industry experts play an instrumental role in designing analytic tools and models, tailored to the requirements of a particular industry segment. The primary research efforts include reaching out participants through mail, tele-conversations, referrals, professional networks, and face-to-face interactions.
They are also in professional corporate relations with various companies that allow them greater flexibility for reaching out to industry participants and commentators for interviews and discussions.
They also refer to a broad array of industry sources for their secondary research, which typically include; however, not limited to:
- Company SEC filings, annual reports, company websites, broker & financial reports, and investor presentations for competitive scenario and shape of the industry
- Scientific and technical writings for product information and related preemptions
- Regional government and statistical databases for macro analysis
- Authentic news articles and other related releases for market evaluation
- Internal and external proprietary databases, key market indicators, and relevant press releases for market estimates and forecast
Furthermore, the accuracy of the data will be analyzed and validated by conducting additional primaries with various industry experts and KOLs. They also provide robust post-sales support to clients.
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