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Silicon Carbide Power Semiconductors Market by Power Module and Industry Vertical - Global Opportunity Analysis and Industry Forecast, 2018-2025

  • ID: 4656197
  • Report
  • September 2018
  • Region: Global
  • 220 Pages
  • Allied Analytics LLP
Silicon Carbide Power Semiconductors Market Overview:



The global silicon carbide (SiC) power semiconductor market was valued at $302 million in 2017, and is projected to reach $1,109 million by 2025, registering a CAGR of 18.1% from 2018 to 2025. The Asia-Pacific captured the highest market share of 49% in 2017 and is expected to be dominant throughout the forecast period, that is, 2018 to 2025.

Silicon carbide (SiC) power semiconductor is a compound semiconductor formed by combining silicon and carbide. It is majorly used in power electronics systems, which deal with control and conversion of electrical power effectively and efficiently. Silicon carbide (SiC) power devices have evolved from immature prototypes in laboratories to viable alternatives to Si-based power devices in high-efficiency and high-power density applications, owing to rapid innovation and development of the semiconductors industry.

SiC-based power devices have significant advantages over silicon-based power devices such as high breakdown voltage, high operating electric field, high operating temperature, high switching frequency, and low losses. SiC-based semiconductors are applicable in areas where high temperature, high voltage, and high-power density are required.

Increasing number of high-voltage, high-efficiency, and high-power density applications, such as industrial motor drives, telecommunication, renewable energy systems, and automotive electronics, drives the growth of the silicon carbide power semiconductors market. Moreover, there is increased penetration of electric vehicles, owing to government support and initiatives. Thus, increasing usage of SiC power devices in automotive electronics drives the market.

However, the growth of the SiC power semiconductors market is restrained by the high wafer cost of silicon carbide. High-purity SiC powder and high-purity silane (SiH4) are the critical precursors for producing SiC layers in the chips. High-purity SiC powder is currently available from a limited number of suppliers and is relatively expensive, while high-purity silane is produced by a few large multinational industrial gas companies. Thus, the market is restrained by the fewer raw material suppliers required for the creation of SiC substrates. However, owing to the rising technological developments, such as the advent of 5G, lucrative opportunities are created for the growth of the silicon carbide power semiconductors market.

The global silicon carbide (SiC) power semiconductors market is segmented by power module, industry vertical, and region. According to power module, it is bifurcated into power product and discrete product. On the basis of industry vertical, it is categorized into IT & telecom, aerospace & defense, industrial, energy & power, electronics, automotive, and healthcare. Based on region, it is analyzed across North America, Europe, Asia-Pacific, and LAMEA.

Key Benefits for Silicon Carbide Power Semiconductors Market:

  • This study comprises the analytical depiction of the global silicon carbide power semiconductors market along with the current trends and future estimations to depict the imminent investment pockets.

  • The overall market potential is determined to understand the profitable trends to gain a stronger coverage in the market.

  • The report presents information related to key drivers, restraints, and opportunities with a detailed impact analysis.

  • The current market is quantitatively analyzed from 2018 to 2025 to highlight the financial competency of the market.

  • Porter’s Five Forces analysis illustrates the potency of the buyers and suppliers.



Silicon Carbide Power Semiconductors Key Market Segments:

By Power Module

  • Power product

  • Discrete product



By Industry Vertical

  • IT & telecom

  • Aerospace & defense

  • Industrial

  • Energy & power

  • Electronics

  • Automotive

  • Healthcare



By Region

  • North America

  • U.S.

  • Canada

  • Mexico

  • Europe

  • UK

  • Germany

  • France

  • Italy

  • Rest of Europe

  • Asia-Pacific

  • China

  • India

  • Japan

  • Australia

  • South Korea

  • Rest of Asia-Pacific

  • LAMEA

  • Brazil

  • Saudi Arabia

  • South Africa

  • Rest of LAMEA

Frequently Asked Questions about the Global Silicon Carbide (Sic) Power Semiconductor Market

What is the estimated value of the Global Silicon Carbide (Sic) Power Semiconductor Market?

The Global Silicon Carbide (Sic) Power Semiconductor Market was estimated to be valued at $302.0 million in 2017.

What is the growth rate of the Global Silicon Carbide (Sic) Power Semiconductor Market?

The growth rate of the Global Silicon Carbide (Sic) Power Semiconductor Market is 17.7%, with an estimated value of $1109.0 million by 2025.

What is the forecasted size of the Global Silicon Carbide (Sic) Power Semiconductor Market?

The Global Silicon Carbide (Sic) Power Semiconductor Market is estimated to be worth $1109.0 million by 2025.
Note: Product cover images may vary from those shown

CHAPTER 1: INTRODUCTION
1.1. REPORT DESCRIPTION
1.2. KEY BENEFITS FOR STAKEHOLDERS
1.3. KEY MARKET SEGMENTS
1.4. RESEARCH METHODOLOGY
1.4.1. Primary research
1.4.2. Secondary research
1.4.3. Analyst tools and models
CHAPTER 2: EXECUTIVE SUMMARY
2.1. CXO PERSPECTIVE
CHAPTER 3: MARKET OVERVIEW
3.1. MARKET DEFINITION AND SCOPE
3.2. KEY FINDINGS
3.2.1. Top impacting factors
3.2.2. Top investment pockets
3.2.3. Top winning strategies
3.3. PORTERS FIVE FORCES ANALYSIS
3.3.1. Moderate to high bargaining power of suppliers
3.3.2. Moderate threat of new entrants
3.3.3. Moderate threat of substitutes
3.3.4. Moderate to high intensity of rivalry
3.3.5. Moderate to high bargaining power of buyers
3.4. KEY PLAYER POSITIONING, 2017 (%)
3.5. MARKET DYNAMICS
3.5.1. Drivers
3.5.1.1. Advantages of compound semiconductors (SiC) over silicon-based technology.
3.5.1.2. Increase in demand of power electronics modules across various industry verticals.
3.5.1.3. Rise in installation of solar photovoltaic panels for electricity generation.
3.5.1.4. Growth in demand of electric vehicles, plug-in electric vehicles, and hybrid electric vehicles .
3.5.2. Restraints
3.5.2.1. High wafer cost of silicon carbide semiconductors.
3.5.2.2. Complexity in supply chain and designing process of SiC semiconductor technology.
3.5.3. Opportunities
3.5.3.1. Advent of 5G mobile communication.
CHAPTER 4: SILICON CARBIDE (SIC) POWER SEMICONDUCTORS MARKET, BY POWER MODULE
4.1. OVERVIEW
4.2. POWER PRODUCTS
4.2.1. Key market trends, growth factors, and opportunities
4.2.2. Market size and forecast, by region
4.2.3. Market analysis, by country
4.3. DISCRETE PRODUCTS
4.3.1. Key market trends, growth factors, and opportunities
4.3.2. Market size and forecast, by region
4.3.3. Market analysis, by country
CHAPTER 5: SILICON CARBIDE (SIC) POWER SEMICONDUCTORS MARKET, BY INDUSTRY VERTICAL
5.1. OVERVIEW
5.2. IT & TELECOM
5.2.1. Key market trends, growth factors, and opportunities
5.2.2. Market size and forecast, by region
5.2.3. Market analysis, by country
5.3. AEROSPACE & DEFENSE
5.3.1. Key market trends, growth factors, and opportunities
5.3.2. Market size and forecast, by region
5.3.3. Market analysis, by country
5.4. INDUSTRIAL
5.4.1. Key market trends, growth factors, and opportunities
5.4.2. Market size and forecast, by region
5.4.3. Market analysis, by country
5.5. ENERGY & POWER
5.5.1. Key market trends, growth factors, and opportunities
5.5.2. Market size and forecast, by region
5.5.3. Market analysis, by country
5.6. ELECTRONICS
5.6.1. Key market trends, growth factors, and opportunities
5.6.2. Market size and forecast, by region
5.6.3. Market analysis, by country
5.7. AUTOMOTIVE
5.7.1. Key market trends, growth factors, and opportunities
5.7.2. Market size and forecast, by region
5.7.3. Market analysis, by country
5.8. HEALTHCARE
5.8.1. Key market trends, growth factors, and opportunities
5.8.2. Market size and forecast, by region
5.8.3. Market analysis, by country
CHAPTER 6: SILICON CARBIDE (SIC) POWER SEMICONDUCTORS MARKET, BY REGION
6.1. OVERVIEW
6.2. NORTH AMERICA
6.2.1. Key market trends, growth factors, and opportunities
6.2.2. Market size and forecast, by power module
6.2.3. Market size and forecast, by industry vertical
6.2.4. Market analysis, by country
6.2.4.1. U.S.
6.2.4.1.1. Market size and forecast, by Power module
6.2.4.1.2. Market size and forecast, by industry vertical
6.2.4.2. Canada
6.2.4.2.1. Market size and forecast, by Power module
6.2.4.2.2. Market size and forecast, by industry vertical
6.2.4.3. Mexico
6.2.4.3.1. Market size and forecast, by Power module
6.2.4.3.2. Market size and forecast, by industry vertical
6.3. EUROPE
6.3.1. Key market trends, growth factors, and opportunities
6.3.2. Market size and forecast, by Power module
6.3.3. Market size and forecast, by industry vertical
6.3.4. Market analysis, by country
6.3.4.1. U.K.
6.3.4.1.1. Market size and forecast, by Power module
6.3.4.1.2. Market size and forecast, by industry vertical
6.3.4.2. Germany
6.3.4.2.1. Market size and forecast, by Power module
6.3.4.2.2. Market size and forecast, by industry vertical
6.3.4.3. France
6.3.4.3.1. Market size and forecast, by Power module
6.3.4.3.2. Market size and forecast, by industry vertical
6.3.4.4. Italy
6.3.4.4.1. Market size and forecast, by Power module
6.3.4.4.2. Market size and forecast, by industry vertical
6.3.4.5. Rest of Europe
6.3.4.5.1. Market size and forecast, by Power module
6.3.4.5.2. Market size and forecast, by industry vertical
6.4. ASIA-PACIFIC
6.4.1. Key market trends, growth factors, and opportunities
6.4.2. Market size and forecast, by Power module
6.4.3. Market size and forecast, by industry vertical
6.4.4. Market analysis, by country
6.4.4.1. China
6.4.4.1.1. Market size and forecast, by Power module
6.4.4.1.2. Market size and forecast, by industry vertical
6.4.4.2. India
6.4.4.2.1. Market size and forecast, by Power module
6.4.4.2.2. Market size and forecast, by industry vertical
6.4.4.3. Japan
6.4.4.3.1. Market size and forecast, by Power module
6.4.4.3.2. Market size and forecast, by industry vertical
6.4.4.4. Australia
6.4.4.4.1. Market size and forecast, by Power module
6.4.4.4.2. Market size and forecast, by industry vertical
6.4.4.5. South Korea
6.4.4.5.1. Market size and forecast, by Power module
6.4.4.5.2. Market size and forecast, by industry vertical
6.4.4.6. Rest of Asia-Pacific
6.4.4.6.1. Market size and forecast, by Power module
6.4.4.6.2. Market size and forecast, by industry vertical
6.5. LAMEA
6.5.1. Key market trends, growth factors, and opportunities
6.5.2. Market size and forecast, by Power module
6.5.3. Market size and forecast, by industry vertical
6.5.4. Market analysis by country
6.5.4.1. Brazil
6.5.4.1.1. Market size and forecast, by Power module
6.5.4.1.2. Market size and forecast, by industry vertical
6.5.4.2. Saudi Arabia
6.5.4.2.1. Market size and forecast, by Power module
6.5.4.2.2. Market size and forecast, by industry vertical
6.5.4.3. South Africa
6.5.4.3.1. Market size and forecast, by Power module
6.5.4.3.2. Market size and forecast, by industry vertical
6.5.4.4. Rest of LAMEA
6.5.4.4.1. Market size and forecast, by Power module
6.5.4.4.2. Market size and forecast, by industry vertical
CHAPTER 7: COMPANY PROFILES
7.1. INFINEON TECHNOLOGY
7.1.1. Company overview
7.1.2. Company snapshot
7.1.3. Operating business segments
7.1.4. Business performance
7.1.5. Key strategic moves and developments
7.2. MICROSEMI CORPORATION
7.2.1. Company overview
7.2.2. Company snapshot
7.2.3. Operating business segments
7.2.4. Business performance
7.2.5. Key strategic moves and developments
7.3. GENERAL ELECTRIC COMPANY
7.3.1. Company overview
7.3.2. Company snapshot
7.3.3. Operating business segments
7.3.4. Business performance
7.3.5. Key strategic moves and developments
7.4. POWER INTEGRATION, INC.
7.4.1. Company overview
7.4.2. Company snapshot
7.4.3. Operating business segments
7.4.4. Business performance
7.4.5. Key strategic moves and developments
7.5. FAIRCHILD SEMICONDUCTOR (ON SEMICONDUCTOR)
7.5.1. Company overview
7.5.2. Company snapshot
7.5.3. Operating business segments
7.5.4. Business performance
7.5.5. Key strategic moves and developments
7.6. STMICROELECTRONICS
7.6.1. Company overview
7.6.2. Company snapshot
7.6.3. Operating business segments
7.6.4. Business performance
7.6.5. Key strategic moves and developments
7.7. TOKYO ELECTRON LIMITED
7.7.1. Company overview
7.7.2. Company snapshot
7.7.3. Operating business segments
7.7.4. Business performance
7.7.5. Key strategic moves and developments
7.8. RENESAS ELECTRONICS CORPORATION
7.8.1. Company overview
7.8.2. Company snapshot
7.8.3. Operating business segments
7.8.4. Business performance
7.8.5. Key strategic moves and developments
7.9. TOSHIBA CORPORATION
7.9.1. Company overview
7.9.2. Company snapshot
7.9.3. Operating business segments
7.9.4. Business performance
7.9.5. Key strategic moves and developments
7.10. CREE, INC.
7.10.1. Company overview
7.10.2. Company snapshot
7.10.3. Operating business segments
7.10.4. Business performance
7.10.5. Key strategic moves and developments
7.11. ROHM CORPORATION
7.11.1. Company overview
7.11.2. Company snapshot
7.11.3. Operating business segments
7.11.4. Business performance
7.11.5. Key strategic moves and developments
7.12. NXP SEMICONDUCTORS
7.12.1. Company overview
7.12.2. Company snapshot
7.12.3. Operating business segments
7.12.4. Business performance
7.12.5. Key strategic moves and developments
Note: Product cover images may vary from those shown
According to a recent report titled, Silicon Carbide Power Semiconductors Market: Global Opportunity Analysis and Industry Forecast, 2018-2025, the global silicon carbide power semiconductors market was valued at $302 million in 2017 and is projected to reach $1,109 million by 2025, registering a CAGR of 18.1% from 2018 to 2025.

At present, the Asia-Pacific dominates the market, followed by Europe and North America. China dominated the global silicon carbide power semiconductors market in 2017, while the UK is expected to lead at a significant growth rate in Europe during the forecast period, i.e., 2018-2025.

The major advantages of silicon carbide power semiconductors over traditional silicon semiconductors are their wider bandgap, higher breakdown electric field, thermal conductivity, and saturated electron drift velocity. These properties enable SiC devices to operate at higher temperatures, withstand very high voltages, minimize energy loss, and operate at high frequencies (RF and microwave). Moreover, the high switching frequency of SiC power devices allows the size of the power electronics system to be comparatively smaller than power modules designed with silicon devices.

Increasing demand for efficient power electronics across various industry verticals, such as automotive, industrial, IT & telecom, electronics, and aerospace & defense, drives the growth of silicon carbide power semiconductors. Moreover, there is growing demand for efficient power electronics systems in renewable energy systems such as solar and wind energy power plants. The installation of renewable energy systems has been increasing, owing to the increased government support and initiatives. This drives the market for silicon carbide power semiconductors. In addition, with the increasing government support for the penetration of electric vehicles, there is growing demand for SiC power devices in automotive electronics, fueling the silicon carbide power semiconductors market. The establishment of 5G infrastructure during the forecast period is expected to provide lucrative opportunities for the growth of silicon carbide power semiconductors.

Key Findings of the Silicon Carbide (SiC) Power Semiconductors Market:

The power product segment generated the highest revenue in terms of power module for the global silicon carbide power semiconductors market in 2017.
In 2017, the IT & telecom segment was the highest revenue contributor in the industry vertical category.
The Asia-Pacific region is anticipated to exhibit the highest CAGR during the forecast period.
In 2017, the Asia-Pacific contributed the highest market revenue, followed by Europe, North America, and LAMEA.

The key players operating in the silicon carbide power semiconductors market are Infineon Technologies AG, Microsemi Corporation, General Electric, Power Integrations, Toshiba Corporation, Fairchild Semiconductor, STMicroelectronics, NXP Semiconductors, Tokyo Electron Limited, Renesas Electronics Corporation, ROHM, and Cree, Inc.
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The analyst offers exhaustive research and analysis based on a wide variety of factual inputs, which largely include interviews with industry participants, reliable statistics, and regional intelligence. The in-house industry experts play an instrumental role in designing analytic tools and models, tailored to the requirements of a particular industry segment. The primary research efforts include reaching out participants through mail, tele-conversations, referrals, professional networks, and face-to-face interactions.

They are also in professional corporate relations with various companies that allow them greater flexibility for reaching out to industry participants and commentators for interviews and discussions.

They also refer to a broad array of industry sources for their secondary research, which typically include; however, not limited to:

  • Company SEC filings, annual reports, company websites, broker & financial reports, and investor presentations for competitive scenario and shape of the industry
  • Scientific and technical writings for product information and related preemptions
  • Regional government and statistical databases for macro analysis
  • Authentic news articles and other related releases for market evaluation
  • Internal and external proprietary databases, key market indicators, and relevant press releases for market estimates and forecast

Furthermore, the accuracy of the data will be analyzed and validated by conducting additional primaries with various industry experts and KOLs. They also provide robust post-sales support to clients.

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