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Global NAND Flash Memory Market - Forecasts from 2019 to 2024

  • ID: 4767104
  • Report
  • March 2019
  • Region: Global
  • 110 pages
  • Knowledge Sourcing Intelligence LLP

FEATURED COMPANIES

  • ATP Electronics Inc
  • Intel Corporation
  • Micron Technology
  • Samsung
  • SK Hynix Inc
  • Toshiba Corporation

The NAND Flash Memory Market is projected to grow at a CAGR of 0.78% to reach US$62.277 billion by 2024, from US$30.306 billion in 2019. NAND flash memory is a type of nonvolatile storage that does not require power to retain data. Electronics equipped with the NAND technology are differentiated on its cost and speed. Utilization of NAND flash drive extend beyond PC systems to other electronic devices. Attributed to its upgraded features and broad storage system, the NAND flash drive is utilized in iPods and smartphones. Increasing demands of smartphones having high features and incorporating video, camera, gaming, and music drive the demand of the extensive storage systems worldwide. Apart from smartphones, the NAND technology is additionally utilized in the wearable gadgets.

This research study examines the current market trends related to the demand, supply, and sales, in addition to the recent developments. Major drivers, restraints, and opportunities have been covered to provide an exhaustive picture of the market. The analysis presents in-depth information regarding the development, trends, and industry policies and regulations being implemented by the relevant agencies. Further, the overall regulatory framework of the market has been exhaustively covered to offer stakeholders a better understanding of the key factors affecting the overall market environment.

Identification of key industry players in the industry and their revenue contribution to the overall business or relevant segment aligned to the study have been covered as a part of competitive intelligence done through extensive secondary research. Various studies and data published by industry associations, analyst reports, investor presentations, press releases and journals among others have been taken into consideration while conducting the secondary research. Both bottom-up and top down approaches have been utilized to determine the market size of the overall market and key segments. The values obtained are correlated with the primary inputs of the key stakeholders in NAND flash memory value chain. The last step involves complete market engineering which includes analyzing the data from different sources and existing proprietary datasets while using various data triangulation methods for market breakdown and forecasting.

Market intelligence is presented in the form of analysis, charts, and graphics to help the clients in gaining faster and efficient understanding of the NAND Flash Memory Market.

Major industry players profiled as part of the report are Samsung, Corporation, Intel Corporation, Micron Technology, SK Hynix Inc., Western Digital Corporation, Toshiba Corporation and ATP Electronics INC.
Segmentation

The NAND Flash Memory Market has been analyzed through following segments:

By Type
Single-Level Cell (SLC)
Multi-Level Cell (MLC)

By Technology
2D NAND
3D NAND

By Industry Vertical
Consumer Electronics
Communication and technology
Automotive
Manufacturing

By Geography
Americas
USA
Canada
Brazil
Others

Europe Middle East and Africa
Germany
France
United Kingdom
Italy
Others

Asia Pacific
China
Japan
India
Taiwan
Others

Note: Product cover images may vary from those shown

FEATURED COMPANIES

  • ATP Electronics Inc
  • Intel Corporation
  • Micron Technology
  • Samsung
  • SK Hynix Inc
  • Toshiba Corporation
1. Introduction
1.1. Market Overview
1.2. Market Definition
1.3. Scope Of The Study
1.4. Currency
1.5. Assumptions
1.6. Base, And Forecast Years Timeline

2. Research Methodology
2.1. Research Design
2.2. Secondary Sources

3. Executive Summary

4. Market Dynamics
4.1. Market Segmentation
4.2. Market Drivers
4.3. Market Restraints
4.4. Market Opportunities
4.5. Porter's Five Force Analysis
4.5.1. Bargaining Power Of Suppliers
4.5.2. Bargaining Power Of Buyers
4.5.3. Threat Of New Entrants
4.5.4. Threat Of Substitutes
4.5.5. Competitive Rivalry In The Industry
4.6. Life Cycle Analysis - Regional Snapshot
4.7. Market Attractiveness

5. Nand Flash Memory Market By Type
5.1. Single-Level Cell (Slc)
5.2. Multi-Level Cell (Mlc)

6. Nand Flash Memory Market By Technology
6.1. 2D Nand
6.2. 3D Nand

7. Nand Flash Memory Market By Industry Vertical
7.1. Consumer Electronics
7.2. Communication And Technology
7.3. Automotive
7.4. Manufacturing

8. Nand Flash Memory Market By Geography
8.1. Americas
8.1.1. USA
8.1.2. Canada
8.1.3. Brazil
8.1.4. Others
8.2. Europe Middle East And Africa
8.2.1. Germany
8.2.2. France
8.2.3. United Kingdom
8.2.4. Italy
8.2.5. Others
8.3. Asia Pacific
8.3.1. China
8.3.2. Japan
8.3.3. India
8.3.4. Taiwan
8.3.5. Others

9. Competitive Intelligence
9.1. Competitive Benchmarking And Analysis
9.2. Recent Investment And Deals
9.3. Strategies Of Key Players

10. Company Profiles
10.1. Samsung Corporation
10.2. Intel Corporation
10.3. Micron Technology
10.4. Sk Hynix
10.5. Wetern Digital Corporation
10.6. Toshiba Corporation
10.7. Atp Electronics Inc
10.8. List Is Not Exhaustive
Note: Product cover images may vary from those shown
  • Samsung
  • Intel Corporation
  • Micron Technology
  • SK Hynix Inc
  • Western Digital Corporation
  • Toshiba Corporation
  • ATP Electronics Inc
Note: Product cover images may vary from those shown
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