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VLSI and Post-CMOS Electronics. Materials, Circuits and Devices - Product Image

VLSI and Post-CMOS Electronics. Materials, Circuits and Devices

  • ID: 4774195
  • Book
  • IET Books
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VLSI, or Very-Large-Scale-Integration, is the practice of combining billions of transistors to create an integrated circuit. At present, VLSI circuits are realised using CMOS technology. However, the demand for ever smaller, more efficient circuits is now pushing the limits of CMOS. Post-CMOS refers to the possible future digital logic technologies beyond the CMOS scaling limits. This 2-volume set addresses the current state of the art in VLSI technologies and presents potential options for post-CMOS processes.

VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits. Volume 1 focuses on design, modelling and simulation, including applications in low voltage and low power VLSI, and post-CMOS devices and circuits. Volume 2 addresses a wide range of devices, circuits and interconnects.

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- Section I: Low voltage and low power VLSI design
- Chapter 1: Low-voltage analog signal processing
- Chapter 2: Negative bias temperature instability (NBTI) aware low leakage circuit design
- Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold design technique
- Chapter 4: Design and analysis of memristor-based DRAM cell for low-power application
- Chapter 5: Design of a novel tunnel FET for low-power applications
- Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL

- Section II: Modelling and simulation for post-CMOS device and circuit design
- Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and challenges
- Chapter 8: Two-dimensional material-based field-effect transistors for post-silicon electronics
- Chapter 9: Theory and modelling of spin-transfer-torque based electronic devices
- Chapter 10: Spintronics memory and logic: an efficient alternative to CMOS technology
- Chapter 11: Tunneling field effect transistors for energy efficient digital, RF and power management circuit designs enabling IoT edge computing platforms
- Chapter 12: High performing metal–oxide semiconductor thin-film transistors
- Chapter 13: CNTFETs: modelling and circuit design
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Rohit Dhiman Assistant Professor.
NIT Hamirpur, Electronics & Communication Engineering Department, India.

Rohit Dhiman is an Assistant Professor in the Electronics & Communication Engineering Department at NIT Hamirpur, India, and is the author/co-author of over 30 publications in international journals and conference proceedings. His main research interest is in device and circuit modelling for low power VLSI design.

Rajeevan Chandel Professor.
National Institute of Technology (NIT) Hamirpur, India.

Rajeevan Chandel is Professor in the Electronics & Communication Engineering Department and Dean (Research & Consultancy) at the National Institute of Technology (NIT) Hamirpur, India. She has over 150 research papers in peer reviewed international journals and conferences. Her research interests are electronics circuit modelling and low power VLSI design.

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