Polyolefin Market - Forecasts from 2020 to 2025

The next generation transistor market is estimated to grow from US$14.577 billion in 2019 to US$18.950 billion by 2025 at a CAGR of 4.47% over the forecast period

There has been a substantial increase in investment in the development of high powered and more efficient transistors. They find their application across multiple devices that are inclusive of but not limited to smartphones, tablets, and notebooks. Nevertheless, in the face of a reportedly shrinking scale as opposed to that of Moore’s Law, chip manufacturers have also increased their investment in research and development towards developing transistors with narrow fin width. Transistors are undoubtedly the essential component for many devices that are an integral part of offerings of various sectors. Furthermore, the consumers are increasingly becoming connected at an increasing rate and more than 3.5 billion people are using the internet with 54% of households now have the internet at home with global broadband subscriptions increasing threefold and has crossed 4 billion active subscriptions in 2017 (Source: IEA). This has come at the cost of growing consumption of energy. The same aspect is also applicable to the increasing number of data centers across the world to cater to analytics and the growing need for enhancing customer experience as well.

The semiconductors sector is subjected to new opportunities thus resulting in pushing the benchmark beyond next-generation transistors. To this instance, it can be noted that the need for coming up with new ways of adding transistors already an allegedly saturated space has resulted in quite a few discoveries and possibilities that could be later put on a commercial scale. In February 2020, a team of researchers who have been funded by the US Army have reportedly discovered a means of turning twisted nanowires of the rarest rare earth metals tellurium into a material to make it into an ideal transistor. The semiconductor wire created with tellurium was only a 2nm across. Previously in 2019, Imec whose role as a research institution for process technology is to explore the limits of semiconductor device scaling through new and enhanced technologies, fabricated nanoscale transistors Molybdenum disulfide, a two-dimensional semiconductor that’s just 3 atoms thick. Such transistors have the potential to replace FinFETS and contribute to the continuation of transistors scaling.

Competitive Strategies that are putting the evolution of Next Generation Transistors in the forefront are evidenced by the growing research and development trend and slow rollout of new and coming of age transistors. Key players in the semiconductor industries are focusing more on breaking the barriers of present generation transistors as a response to an increasing need for responding to the increasing challenge of energy wasted in modern computing simultaneously enhancing the processing capabilities at the same time widening the applicability of ICs. In 2019, Samsung’s foundry division announced the plans for speedy rollout of 3-nm gate-all-around (GAA) technology (GAAFET) starting with risk production of one of two 3-nm GAA processes that it plans to offer by the second half of 2020 and mass production expected in 2021. This change in technology reduces a total silicon size by 35% while using 50% less power. This enables a 33% performance increase over the 5 nm FinFET process.

In February 2020, TSMC, globally the largest dedicated semiconductor foundry and STMicroelectronics, a global semiconductor leader that cater to a broad range of electronics applications, have announced to collaborate with the objective to accelerate the development of Gallium Nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market. Through the means of this collaboration, ST’s innovative and strategic GaN products will be manufactured using TSMC’s leading GaN process technology. GaN Transistors are faster and more efficient the silicon enabled devices also enable the design of more compact devices for improved form factors. It also aids in greater energy efficiency at higher power leading to a good reduction of power losses. Also, TSMC will start producing 5nm system chips for Apple in the second quarter of 2020. Optimized for both mobile and high-performance computing applications TSMC also has its own 5nm Fin Field-Effect Transistor (FinFET) process technology. Currently, TSMC is running a risk production of the same and in a few months.

The aerospace and defense industry offers good growth opportunity for the transistor manufacturers. The aerospace and the defense industries around the world are increasingly increasing their budget. From the perspective of aerospace, the certain companies that have surfaced and are successfully foraying into the sector. For instance, Elon Musk-led company SpaceX received approval to build its mars space ship in 2020. Further in February 2020, due to unreliable communication over the polar region as suggested by the U.S. military has expressed interest in collaborating with Space X to initiate polar communication experiments in cooperation with SpaceX’s Starlink Airbus’ OneWeb Satellites.

Again in 2020, Firefly Aerospace has signed a launch agreement with Satlantis. The Firefly Alpha launch vehicle will be utilized by Satlantis to deploy its constellation of Earth Observation (EO) and remote sensing satellites commencing from 2022. Further, the advent of budget transcontinental airlines along with rising availability of disposable income has increased the volume of passengers that has led to the expansion of aviation which in turn has led to a surge in Next Generation Transistors Market. Further, the global military budget expenditure was to the tune of $1822 billion in 2018. This represented an increase of 2.6 % in 2017. The five biggest spenders in 2018 were the United States, China, Saudi Arabia, India, and France, which collectively accounted for 60% of the global military spending. The total global military spending in 2018 was at the highest level since 1988. This higher level is mainly contributed by the spending of the US and China. Concerning Asia, military spending stood at the tune of $507 billion that accounted for 28% of the total global military spending (Source: The SIPRI Military Expenditure Database). Thus, the defense sector will lead to a surge in the next generation transistors market.

Segmentation:

By Type

• Bipolar Junction Transistor (BJT)
• Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
• High Electron Mobility Transistor (HEMT)
• Others

By Type of Material

• Indium Arsenide (InAs)
• Gallium Arsenide (GaAs)
• Indium Phosphide (InP)
• Gallium Nitride (GaN)

By End-User Industry

• Aerospace and Defense
• Consumer Electronics
• Communication and Technology
• Industrial

By Geography

North America

• USA
• Canada
• Mexico

South America

• Brazil
• Argentina
• Others

Europe

• UK
• Germany
• France
• Others
• The Middle East and Africa
• Saudi Arabia
• Israel
• Others

Asia Pacific

• Japan
• China
• India
• Others