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Advanced Technologies for Next Generation Integrated Circuits. Materials, Circuits and Devices - Product Image

Advanced Technologies for Next Generation Integrated Circuits. Materials, Circuits and Devices

  • ID: 4852579
  • Book
  • May 2020
  • IET Books
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Although existing nanometer CMOS technology is expected to remain dominant for the next decade, new non-classical devices are being developed as the potential replacements of silicon CMOS, in order to meet the ever-present demand for faster, smaller, more efficient integrate circuits. Many new devices are based on novel emerging materials such as one-dimensional carbon nanotubes and two-dimensional graphene, non-graphene two-dimensional materials, and transition metal dichalcogenides. Such devices use on/off operations based on quantum mechanical current transport, and so their design and fabrication require an understanding of the electronic structures of materials and technologies. Moreover, new electronic design automation (EDA) tools and techniques need to be developed based on integrating devices from emerging novel material-based technologies.

The aim of this book is to explore the materials and design requirements of emerging integrated circuit technologies, and to outline their prospective applications.

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- Chapter 1: Graphene and Other than Graphene Materials Technology and Beyond
- Chapter 2: Emerging Graphene Compatible Biomaterials
- Chapter 3: Single Electron Devices: Concept to realization
- Chapter 4: Application of Density Functional Theory (DFT) for Emerging Materials and Interconnects
- Chapter 5: Memristor Devices and Memristor-based Circuits
- Chapter 6: Organic-inorganic heterjunctions for optoelectronic applications
- Chapter 7: Emerging High-k Dielectrics for Nanometer CMOS Technologies and Memory Devices
- Chapter 8: Technology and Modeling of DNTT Organic Thin Film Transistors
- Chapter 9: Doping-free Tunnelling Transistors-Technology and Modeling
- Chapter 10: Tunnel Junctions to Tunnel Field Effect Transistors - Technologies, Current Transport Models and Integration
- Chapter 11: Low Dimension Mateirals-based Interlayer Tunnel Field Effect Transistors: Technologies, Current Transport Models and Integration
- Chapter 12: Molybdenum Disulfide – Boron Nitrde Junctionless Tunnel Effect Transistor
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Ashok Srivastava Professor.
Louisiana State University, Baton Rouge, USA.

Ashok Srivastava is the Wilbur D. and Camille V. Fugler, Jr., Professor of Electrical and Computer Engineering at Louisiana State University, Baton Rouge. Professor Srivastava is an associate editor of IEEE Transactions on Nanotechnology and is Editor-in-Chief of the Journal of Sensor Technology. Prof. Srivastava is the author of 200 peer-reviewed articles in VLSI circuits and Systems and has authored a book on Nanoelectronics and edited books in Post-CMOS Nanoelectronics.

Saraju Mohanty Professor.
University of North Texas (UNT), Department of Computer Science and Engineering, USA.

Saraju P. Mohanty is a professor in the department of computer science and engineering at the University of North Texas (UNT) and is the Editor-in-Chief of IEEE Consumer Electronics magazine. Professor Mohanty is the author of 300 peer-reviewed articles and 4 books.

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