InGaAs Photo Diode Sensor Market, By Product Type, By Range, By Application, and by Region - Size, Share, Outlook, and Opportunity Analysis, 2020 - 2027

IngaAs photodiode sensors are based on semiconductor light sensors which generates photocurrent when its active area is illuminated by light. Generally, the sensitivity of InGaAs photodiode sensors range between 800nm to 1700 nm. The sensor offers low noise, high sensitivity, high speed, and a spectral response ranging from 0.5 μm to 2.6 μm.

Market Dynamics

The global market is majorly driven by increasing application of InGaAs photodiode sensors in light detection and ranging (LiDAR). LiDAR stands for light detecting and ranging, a remote sensing method which is used to measure distances. The distance is measured by emitting a laser light to the target and the LiDAR detects its reflection with a photo sensor. LiDAR is increasingly adopted in applications such as automotive ADAS (Advanced Driver Assistance Systems), automated guided vehicle (AGV), and range finding. Light sources such as laser and photo sensors such as InGaAs photo diodes are employed in LiDAR.

For instance, Hamamatsu Photonics K.K., a Japan-based company which is specialized in designing and manufacturing optical devices, sensors, and their applied instruments, offers pulsed laser diodes for LiDAR and a variety of high-sensitivity photo sensors that can be used for short, mid, and long-range detection by ADAS and autonomous vehicles. These photo sensors include Si PIN photodiodes, Si APD, InGaAs avalanche photodiodes (APD), MPPCs (SiPMs), and distance image sensors. Moreover, the company offers G14858-0020AB InGaAs avalanche photodiodes designed for distance measurement applications using 1550 nm wavelength.

Additionally, short-wave infrared (SWIR) detectors and emitters have a high potential value in several applications including the Internet of Things (IoT) and advanced driver assistance systems (ADAS). Indium Gallium Arsenide (InGaAs) photo detectors are widely used in the SWIR (Short-wave infrared) devices.

For instance, FLIR Systems, Inc. offers the FLIR A6260 InGaAs SWIR camera. This InGaAs camera is linear with 0.9 to 1.7 µm sensing waveband, making it the perfect tool for high temperature thermal measurements and applications that require measuring through standard glass. FLIR Systems, Inc. operates as a subsidiary of Teledyne Technologies, specialized in designing and manufacturing thermal energy products.

Market Taxonomy

This report segments the global InGaAs Photo Diode Sensor market on the basis of product type, range, application, and region. On the basis of product type, global InGaAs Photo Diode Sensor market is segmented into multi array element and single element InGaAs PIN. By range, the global market is segmented into short range detection, medium range detection, and long range detection. Based on application, the global market can be categorized into LiDAR, optical communication, and infrared imaging. On the basis of region, global InGaAs Photo Diode Sensor market is segmented into North America, Latin America, Europe, Asia Pacific, Middle East and Africa.

Key features of the study:

• This report provides an in-depth analysis of the global InGaAs photo diode sensor market and provides market size (US$ Million) and compound annual growth rate (CAGR %) for the forecast period (2020-2027), considering 2019 as the base year
• It elucidates potential revenue opportunities across different segments and explains attractive investment proposition matrix for this market
• This study also provides key insights about market drivers, restraints, opportunities, new product launches or approval, regional outlook, and competitive strategy adopted by leading players
• It profiles leading players in the global InGaAs photo diode sensor market based on the following parameters – regulatory landscape, company overview, financial performance, product portfolio, geographical presence, distribution strategies, key developments and strategies, and future plans
• Major companies operating in the global InGaAs photo diode sensor market are First Sensor, Hamamatsu Photonics K.K., Laser Components GmbH, OSI LaserDiode, Kyoto Semiconductor Co., Ltd., Teledyne Judson Technologies (TJT), SphereOptics GmbH, and Voxtel, Inc.
• These key market players are focusing on collaboration strategy with other market leaders to innovate and launch new products to meet the increasing needs and requirements of consumers
• Insights from this report would allow marketers and management authorities of companies to make informed decision regarding future product launches, technology up gradation, market expansion, and marketing tactics
• The global InGaAs photo diode sensor market report caters to various stakeholders in this industry including investors, suppliers, distributors, new entrants, and financial analysts
• Stakeholders would have ease in decision-making through the various strategy matrices used in analyzing the global InGaAs photo diode sensor market

Detailed Segmentation:

Global InGaAs Photo Diode Sensor Market, By Product Type:

• Multi-Element Array
• PN
• PIN
• Avalanche
• Single-Element InGaAs PIN

Global InGaAs Photo Diode Sensor Market, By Range:

• Short Range Detection
• Medium Range Detection
• Long Range Detection

Global InGaAs Photo Diode Sensor Market, By Application:

• LiDAR
• Automotive ADAS
• Automated Guided Vehicle (AGV)
• Range Finding
• Others (Surveillance Camera, etc.)
• Optical Communication
• Power Monitoring
• DWDM Monitoring
• Single/Multi-Mode Fiber Optic Receiver
• Others
• Infrared Imaging (Especially for Medical Imaging )

Global InGaAs Photo Diode Sensor Market, By Region:

• North America
• Latin America
• Europe
• Asia Pacific
• Middle East and Africa

Company Profiles

• First Sensor
• Company Overview
• Product Portfolio
• Financial Performance
• Key Strategies
• Key highlights
• Hamamatsu Photonics K.K.
• Kyoto Semiconductor Co., Ltd.
• Laser Components GmbH
• OSI LaserDiode
• SphereOptics GmbH
• Teledyne Judson Technologies (TJT)
• Voxtel, Inc.