Growth Kinetics of Chemical Compound Layers

  • ID: 660536
  • Report
  • 210 Pages
  • CISP - Cambridge International Science Publishing
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The author proposes a physico-chemical approach to examining the process of solid state growth of layers of chemical compounds at the interface between initial substances in binary heterogeneous systems formed by two solid substances and between a solid substance and a liquid or gas. Experimental data obtained for the thickness (mass) of layers–time dependences are presented. Growth rates of the layer of the same compound in different reaction pairs consisting of elements and their chemical compounds are compared. The effect of dissolution of the solid–liquid system and of evaporation in the solid–gas system on the rate of formation of a chemical compound layer is taken into consideration. Reasons for large differences in the coefficients of reaction diffusion and self-diffusion of components of the chemical compound are analysed. Problems discussed in the book are encountered in welding, brazing, heterogeneous catalysis, semiconductor technology, microelectronics.
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