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Gate Driver IC Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2023-2028

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    Report

  • 144 Pages
  • September 2023
  • Region: Global
  • IMARC Group
  • ID: 5633318
The global gate driver IC market size reached US$ 1.4 Billion in 2022. Looking forward, the publisher expects the market to reach US$ 2.0 Billion by 2028, exhibiting a growth rate (CAGR) of 5.8% during 2023-2028.

A gate driver IC is a power amplifier that accepts a low-power input from a controller IC and generates the necessary high-current gate drive for power devices. It enhances the performance of external power transistor gates that are used to supply current to an electric motor. It serves as a link between the logic level control inputs and the power metal-oxide-semiconductor field-effect transistors (MOSFETs). It is robust and flexible for offering an intelligent solution to drive the power semiconductor efficiently and ensuring minimal internal resistance to the transistor. Apart from this, it provides several advantages like reducing switching losses in the load transistor, decreasing its switching time, and driving the transistor into the conductive and non-conductive states.

Gate Driver IC Market Trends:

The growing traction of smart homes among individuals across the globe represents one of the key factors driving the market. Moreover, there is a rise in the demand for high voltage devices in the residential and commercial sectors. This, along with the increasing electrification of automobiles to replace gasoline vehicles with an electric powertrain, is propelling the growth of the market. In addition, there is a rise in the utilization of transistors in different renewable energy systems for amplifying, controlling, and generating electrical signals. This, coupled with the growing initiatives by governments of several countries to use renewable energy sources such as tidal, solar, and wind power, is positively influencing the market. Besides this, the increasing implementation of smart grids for effective power management is offering lucrative growth opportunities to industry investors. Additionally, key market players are extensively investing in research and development (R&D) activities to introduce a slimmer version of gate driver IC and decrease the size of consumer goods, which is bolstering the growth of the market.

Key Market Segmentation:

The publisher provides an analysis of the key trends in each sub-segment of the global gate driver IC market report, along with forecasts at the global, regional and country level from 2023-2028. The report has categorized the market based on transistor type, semiconductor material, mode of attachment, isolation technique and application.

Breakup by Transistor Type:

  • MOSFET
  • IGBT

Breakup by Semiconductor Material:

  • Si
  • SiC
  • GaN

Breakup by Mode of Attachment:

  • On-Chip
  • Discrete

Breakup by Isolation Technique:

  • Magnetic Isolation
  • Capacitive Isolation
  • Optical Isolation

Breakup by Application:

  • Residential
  • Industrial
  • Commercial

Breakup by Region:

  • North America
  • United States
  • Canada
  • Asia-Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Indonesia
  • Others
  • Europe
  • Germany
  • France
  • United Kingdom
  • Italy
  • Spain
  • Russia
  • Others
  • Latin America
  • Brazil
  • Mexico
  • Others
  • Middle East and Africa

Competitive Landscape:

The competitive landscape of the industry has also been examined along with the profiles of the key players being Hitachi Power Semiconductor Device Ltd. (Hitachi Ltd.), Infineon Technologies AG, Microchip Technology Inc., Mouser Electronics (TTI Inc., Berkshire Hathaway Inc.), NXP Semiconductors N.V., Onsemi, Renesas Electronics Corporation, Rohm Semiconductor, Semtech Corporation, STMicroelectronics, Texas Instruments Incorporated and Toshiba Corporation.

Key Questions Answered in This Report:

  • How has the global gate driver IC market performed so far and how will it perform in the coming years?
  • What has been the impact of COVID-19 on the global gate driver IC market?
  • What are the key regional markets?
  • What is the breakup of the market based on the transistor type?
  • What is the breakup of the market based on the semiconductor material?
  • What is the breakup of the market based on the mode of attachment?
  • What is the breakup of the market based on the isolation technique?
  • What is the breakup of the market based on the application?
  • What are the various stages in the value chain of the industry?
  • What are the key driving factors and challenges in the industry?
  • What is the structure of the global gate driver IC market and who are the key players?
  • What is the degree of competition in the industry?

Table of Contents

1 Preface
2 Scope and Methodology
2.1 Objectives of the Study
2.2 Stakeholders
2.3 Data Sources
2.3.1 Primary Sources
2.3.2 Secondary Sources
2.4 Market Estimation
2.4.1 Bottom-Up Approach
2.4.2 Top-Down Approach
2.5 Forecasting Methodology
3 Executive Summary
4 Introduction
4.1 Overview
4.2 Key Industry Trends
5 Global Gate Driver IC Market
5.1 Market Overview
5.2 Market Performance
5.3 Impact of COVID-19
5.4 Market Forecast
6 Market Breakup by Transistor Type
6.1 MOSFET
6.1.1 Market Trends
6.1.2 Market Forecast
6.2 IGBT
6.2.1 Market Trends
6.2.2 Market Forecast
7 Market Breakup by Semiconductor Material
7.1 Si
7.1.1 Market Trends
7.1.2 Market Forecast
7.2 SiC
7.2.1 Market Trends
7.2.2 Market Forecast
7.3 GaN
7.3.1 Market Trends
7.3.2 Market Forecast
8 Market Breakup by Mode of Attachment
8.1 On-Chip
8.1.1 Market Trends
8.1.2 Market Forecast
8.2 Discrete
8.2.1 Market Trends
8.2.2 Market Forecast
9 Market Breakup by Isolation Technique
9.1 Magnetic Isolation
9.1.1 Market Trends
9.1.2 Market Forecast
9.2 Capacitive Isolation
9.2.1 Market Trends
9.2.2 Market Forecast
9.3 Optical Isolation
9.3.1 Market Trends
9.3.2 Market Forecast
10 Market Breakup by Application
10.1 Residential
10.1.1 Market Trends
10.1.2 Market Forecast
10.2 Industrial
10.2.1 Market Trends
10.2.2 Market Forecast
10.3 Commercial
10.3.1 Market Trends
10.3.2 Market Forecast
11 Market Breakup by Region
11.1 North America
11.1.1 United States
11.1.1.1 Market Trends
11.1.1.2 Market Forecast
11.1.2 Canada
11.1.2.1 Market Trends
11.1.2.2 Market Forecast
11.2 Asia-Pacific
11.2.1 China
11.2.1.1 Market Trends
11.2.1.2 Market Forecast
11.2.2 Japan
11.2.2.1 Market Trends
11.2.2.2 Market Forecast
11.2.3 India
11.2.3.1 Market Trends
11.2.3.2 Market Forecast
11.2.4 South Korea
11.2.4.1 Market Trends
11.2.4.2 Market Forecast
11.2.5 Australia
11.2.5.1 Market Trends
11.2.5.2 Market Forecast
11.2.6 Indonesia
11.2.6.1 Market Trends
11.2.6.2 Market Forecast
11.2.7 Others
11.2.7.1 Market Trends
11.2.7.2 Market Forecast
11.3 Europe
11.3.1 Germany
11.3.1.1 Market Trends
11.3.1.2 Market Forecast
11.3.2 France
11.3.2.1 Market Trends
11.3.2.2 Market Forecast
11.3.3 United Kingdom
11.3.3.1 Market Trends
11.3.3.2 Market Forecast
11.3.4 Italy
11.3.4.1 Market Trends
11.3.4.2 Market Forecast
11.3.5 Spain
11.3.5.1 Market Trends
11.3.5.2 Market Forecast
11.3.6 Russia
11.3.6.1 Market Trends
11.3.6.2 Market Forecast
11.3.7 Others
11.3.7.1 Market Trends
11.3.7.2 Market Forecast
11.4 Latin America
11.4.1 Brazil
11.4.1.1 Market Trends
11.4.1.2 Market Forecast
11.4.2 Mexico
11.4.2.1 Market Trends
11.4.2.2 Market Forecast
11.4.3 Others
11.4.3.1 Market Trends
11.4.3.2 Market Forecast
11.5 Middle East and Africa
11.5.1 Market Trends
11.5.2 Market Breakup by Country
11.5.3 Market Forecast
12 SWOT Analysis
12.1 Overview
12.2 Strengths
12.3 Weaknesses
12.4 Opportunities
12.5 Threats
13 Value Chain Analysis
14 Porters Five Forces Analysis
14.1 Overview
14.2 Bargaining Power of Buyers
14.3 Bargaining Power of Suppliers
14.4 Degree of Competition
14.5 Threat of New Entrants
14.6 Threat of Substitutes
15 Price Analysis
16 Competitive Landscape
16.1 Market Structure
16.2 Key Players
16.3 Profiles of Key Players
16.3.1 Hitachi Power Semiconductor Device Ltd. (Hitachi Ltd.)
16.3.1.1 Company Overview
16.3.1.2 Product Portfolio
16.3.2 Infineon Technologies AG
16.3.2.1 Company Overview
16.3.2.2 Product Portfolio
16.3.2.3 Financials
16.3.2.4 SWOT Analysis
16.3.3 Microchip Technology Inc.
16.3.3.1 Company Overview
16.3.3.2 Product Portfolio
16.3.3.3 Financials
16.3.3.4 SWOT Analysis
16.3.4 Mouser Electronics (TTI Inc., Berkshire Hathaway Inc.)
16.3.4.1 Company Overview
16.3.4.2 Product Portfolio
16.3.5 NXP Semiconductors N.V.
16.3.5.1 Company Overview
16.3.5.2 Product Portfolio
16.3.5.3 Financials
16.3.5.4 SWOT Analysis
16.3.6 Onsemi
16.3.6.1 Company Overview
16.3.6.2 Product Portfolio
16.3.6.3 Financials
16.3.6.4 SWOT Analysis
16.3.7 Renesas Electronics Corporation
16.3.7.1 Company Overview
16.3.7.2 Product Portfolio
16.3.7.3 Financials
16.3.7.4 SWOT Analysis
16.3.8 Rohm Semiconductor
16.3.8.1 Company Overview
16.3.8.2 Product Portfolio
16.3.8.3 Financials
16.3.8.4 SWOT Analysis
16.3.9 Semtech Corporation
16.3.9.1 Company Overview
16.3.9.2 Product Portfolio
16.3.9.3 Financials
16.3.10 STMicroelectronics
16.3.10.1 Company Overview
16.3.10.2 Product Portfolio
16.3.11 Texas Instruments Incorporated
16.3.11.1 Company Overview
16.3.11.2 Product Portfolio
16.3.11.3 Financials
16.3.11.4 SWOT Analysis
16.3.12 Toshiba Corporation
16.3.12.1 Company Overview
16.3.12.2 Product Portfolio
16.3.12.3 Financials
16.3.12.4 SWOT Analysis

Companies Mentioned

  • Hitachi Power Semiconductor Device Ltd. (Hitachi Ltd.)
  • Infineon Technologies AG
  • Microchip Technology Inc.
  • Mouser Electronics (TTI Inc.
  • Berkshire Hathaway Inc.)
  • NXP Semiconductors N.V.
  • Onsemi
  • Renesas Electronics Corporation
  • Rohm Semiconductor
  • Semtech Corporation
  • STMicroelectronics
  • Texas Instruments Incorporated
  • Toshiba Corporation.

Methodology

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Table Information