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A bipolar transistor with an insulated gate terminal is known as an insulated gate bipolar transistor (IGBT). IGBTs are excellent for high-voltage, high-current applications and require a low voltage on the gate to keep a system running. The IGBT incorporates the key characteristics of both BJTs (Bipolar Junction Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) into a single device. Fast switching speed along with zero gate drive current, ease of drive, high pulse current tolerance, high input impedance, and high voltage capabilities are the key benefits of IGBTs over other types of transistor devices.
The market is predicted to rise significantly as a result of various factors such as increasing EV adoption, renewable energy generation, household appliance usage, and so on. The global IGBT market is estimated to be valued at US$8.38 billion in 2023, progressing at a CAGR of 10.54% during the forecast period.
Segment Covered
By IGBT Type: In terms of type IGBT type, the report includes the bifurcation of market into three segments: IGBT Module, Discrete IGBT and Intelligent Power Module (IPM). IGBT Module segment lead the market, accounting for largest share of the market because IGBT modules are widely employed in three primary fields: industrial control and power, new energy, and inverter white home appliances and other applications. The discrete IGBT market is expected to grow at the highest CAGR, due to simple structure and low cost.
By Application: The report identifies five segments of the global IGBT market, on the basis of application: Automotive, Home Appliances, Industrial, Power Grid and Railway and Renewable Energy. The automotive segment dominated the market. The growth in automotive sector was primarily driven by rising adoption of electric vehicles.
Geographic Coverage
According to this report, the global IGBT market can be divided into four major regions, on the basis of geographical areas: Asia Pacific (China, Japan, and Rest of Asia Pacific), Europe (UK, Germany, France, Italy, and Rest of Europe), North America (The US, and Rest of North America) and Rest of World. Asia Pacific enjoyed the major share of the global market share, primarily owing to the presence of various global and domestic players especially in China. China is the leading IGBT market in the Asia Pacific region. The rapid growth of automotive market in countries like China, Japan, Taiwan, etc. would boost IGBT market of Asia Pacific region in the years to come. North America IGBT market provides lucrative opportunities in the coming years. The rapid development in industrial sector and government initiatives to strengthen semiconductor chips production capacity, gives a resilient opportunity for IGBT market.
Top Impacting Factors
Growth Drivers
- Rising Wind Power generation
- Increasing Solar Power generation
- Escalating Industrial Activities
- Increasing Adoption Of Electric Vehicles
Challenges
- Latch Up Issue in IGBT
- Availability of Alternatives
Trends
- Rising Adoption of SiC
- New Generation IGBTs
Driver: Escalating Industrial Activities
Industrial production is an integral part of a country’s economy. The output of an industrial sector is measured by industrial production. Manufacturing, mining, and utilities are all part of the industrial sector. IGBTs are widely used for high power industrial applications including motor drive inverters, switch mode power supplies, uninterruptible power supplies, etc. With the rise in industrial production, the use of these electrical components are increasing. Therefore, the IGBT market would grow.
Challenge: Latch Up Issue in IGBT
Latch-up is a serious issue in IGBT. Latch-Up is a functional chip failure associated with excessive current going through the chip and this is mainly caused by weak design. It can be caused by various factors, such as static electricity, noise, or application of a voltage to the input pin outside the power supply voltage range. IGBTs have an unavoidable parasitic component inherent to the structure and that component is responsible for some of the most common failure mode like static latch up and dynamic latch up. This could be a huge challenge to the IGBT market, moreover this problem can be resolve by improving the design of IGBT.
Trend: Rising Adoption of SiC
SiC devices compared to Si-based devices, has higher efficiency, higher switching frequencies, and offers better overall performance. Using SiC, it is possible to make devices, such as schottky barrier diodes and MOSFETs, which achieve high voltages, low turn-on resistance and fast operation. Since SiC occupies a very small area of the chip and have a high current density, their ability to withstand short circuits that can cause thermal breaks tends to be lower than that of silicon-based devices. IGBT power devices can be fabricated by SiC successfully and that would boost the market in the coming years.
The COVID-19 Analysis
The global impact of COVID-19 has been unexpected and staggering, with insulated gate bipolar transistors witnessing a negative impact on demand across all regions. Insulated gate bipolar transistor manufacturing has been extremely disturbed in the first quarter of 2020, due to the lack of components availability. Moreover, unavailability of the total workforce affected the insulated gate bipolar transistor production capacity and market growth. Due to the imposed lockdown, the automakers around the world cut the orders as vehicle sales plummeted. This was an important factor that had a detrimental impact on the market of insulated gate bipolar transistors. Thus, in the year 2020, the market experienced slow growth rate as compared to pre pandemic level. As lockdown restrictions were normalized in the second half of 2020, demand for power semiconductors were returned to pre pandemic level.
Analysis of Key Players
The global IGBT market is dominated with the presence of few major players. The top three players occupied more than 50% share of the market. The key players of the global IGBT market are Hitachi, Ltd., Mitsubishi Electric, Toshiba Corporation, Infineon Technology, ABB Ltd., NXP Semiconductor N.V., Renesas Electronic Corporation, STMicroelectronics N.V., Fuji Electric, Semikron, Danfoss Group, StarPower Semiconductor, Vincotech, and ROHM Semiconductor.
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Table of Contents
1. Executive Summary
Companies Mentioned
- ABB Ltd
- Danfoss Group
- Fuji Electric
- Hitachi, Ltd.
- Infineon Technology
- Mitsubishi Electric
- NXP Semiconductor N.V.
- Renesas Electronics Corporation
- ROHM Semiconductor
- Semikron
- StarPower Semiconductor
- STMicroelectronics N.V.
- Toshiba Corporation
- Vincotech
