Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevices is an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary alloy III-V semiconductor nanowires. Each chapter is prepared by renowned experts in the field, describing the current state of knowledge and key areas of research. The book is written at the expert level, but also serves as a guide for researchers or graduate students aiming to enter semiconductor research.
Table of Contents
CONTENTForeword i
Preface iii
List of Contributors iv
CHAPTERS
1. General Synthetic Strategies for III-V Nanowires 3
Jianye Li and Hongmin Zhu
2. Growth, Properties, and Device Applications of III-Nitride Nanowire Heterostructures 22
Zetian Mi
3. III-Phospide Nanowires 43
Erik P.A.M. Bakkers, Moira Hocevar, Rienk E. Algra, Lou-Fé Feiner, and Marcel A. Verheijen
4. Growth of III-Arsenide/Phosphide Nanowires by Molecular Beam Epitaxy 68
Jean-Christophe Harmand, Frank Glas, Gilles Patriarche, Ludovic Largeau, Maria
Tchernycheva, Corinne Sartel, Linsheng Liu and Fauzia Jabeen
5. III-Antimonide Nanowires 89
Helge Weman and Dheeraj L. Dasa
6. III-V Ternary Nanowires 105
Faustino Martelli
7. III-V Semiconductor Nanowire Transistors 129
Franz-Josef Tegude and Werner Prost
8. III-V Semiconductor Nanowire Light Emitting Diodes and Lasers 145
Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S.K. Varadwaj, Shinjiroh Hara, Kenji
Hiruma, and Takashi Fukui
9. III-V Semiconductor Nanowire Solar Cells 158
S. Crankshaw and A. Fontcuberta i Morral
Author Index 175
Subject Index 177
