Global IGBT Market 2017-2021

  • ID: 4339953
  • Report
  • Region: Global
  • 63 pages
  • TechNavio
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FEATURED COMPANIES

  • Fuji Electric
  • Infineon Technologies
  • IXYS Corporation
  • Mitsubishi Corporation
  • ON Semiconductor
  • SEMIKRON
  • MORE
About IGBT
Insulated gate bipolar transistor (IGBT) is a semiconductor power device that is used to control the electrical energy. It provides a stable supply of electricity by reducing the congestion in power supply, leading to optimized power utilization. It is an electronic switch that provides fast switching with electrical efficiency. It is a fusion of bipolar junction transistor (BJT) and power MOSFET (metal oxide semiconductor field effect transistor). IGBTs have the high current handling capability of BJT and high switching speed of power MOSFETs, making it a better device than other transistors. It is also known by names such as bipolar mode MOSFET, conductivity modulated field effect transistor (COMFET), and bipolar MOS transistor.

The analysts forecast the global IGBT market to grow at a CAGR of 11.50% during the period 2017-2021.

Covered in this report
The report covers the present scenario and the growth prospects of the global IGBT market for 2017-2021. To calculate the market size, the report considers the revenue generated from IGBT shipments.

The market is divided into the following segments based on geography:
  • Americas
  • APAC
  • EMEA
The report, Global IGBT Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
  • Fuji Electric
  • Infineon Technologies
  • Mitsubishi Corporation
  • SEMIKRON
Other prominent vendors
  • Alpha and Omega Semiconductor
  • IXYS Corporation
  • ON Semiconductor
  • STMicroelectronics
  • TOSHIBA
Market drivers
  • Increase in demand for electric and hybrid electric vehicles
  • For a full, detailed list, view the full report
Market challenges
  • Wide bandgap (WBG) semiconductor materials
  • For a full, detailed list, view the full report
Market trends
  • Functional consolidation of semiconductor devices
  • For a full, detailed list, view the full report
Key questions answered in this report
  • What will the market size be in 2021 and what will the growth rate be?
  • What are the key market trends?
  • What is driving this market?
  • What are the challenges to market growth?
  • Who are the Key vendors in this market space?
  • What are the market opportunities and threats faced by the key vendors?
  • What are the strengths and weaknesses of the key vendors?
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Note: Product cover images may vary from those shown
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FEATURED COMPANIES

  • Fuji Electric
  • Infineon Technologies
  • IXYS Corporation
  • Mitsubishi Corporation
  • ON Semiconductor
  • SEMIKRON
  • MORE
PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction
  • Key market highlights
  • Market overview
PART 05: Market landscape
  • Market size and forecast
  • Five forces analysis
PART 06: Market segmentation by application
  • Market overview
  • EV/HEVs
  • Industrial applications
  • Motor drives
  • Consumer appliances
  • UPS
  • Others
PART 07: Market segmentation by product
  • Market overview
  • IGBT modules
  • Discrete IGBTs
PART 08: Geographical segmentation
  • Market overview
PART 09: Decision framework

PART 10: Drivers and challenges
  • Market drivers
  • Impact of drivers on key customer segments
  • Market challenges
  • Impact of challenges on key customer segments
PART 11: Market trends
  • Functional consolidation of semiconductor devices
  • Increase in use of renewable energy sources
  • Increased copper wire interconnections
PART 12: Vendor landscape
  • Competitive scenario
  • Other prominent vendors
PART 13: Key vendor analysis
  • Fuji Electric
  • Infineon Technologies
  • Mitsubishi Corporation
  • SEMIKRON
PART 14: Appendix
  • List of abbreviations
List of Exhibits
Exhibit 01: Comparison of devices
Exhibit 02: Global IGBT market overview
Exhibit 03: Global IGBT market 2016-2021 ($ billions)
Exhibit 04: Five forces analysis
Exhibit 05: Global IGBT market by application 2016-2021 (% share of revenue)
Exhibit 06: Global IGBT market by application 2016-2021 ($ billions)
Exhibit 07: Global IGBT market by EV/HEVs 2016-2021 ($ billions)
Exhibit 08: Global IGBT market by industrial applications 2016-2021 ($ billions)
Exhibit 09: Global IGBT market by motor drives 2016-2021 ($ billions)
Exhibit 10: Global IGBT market by consumer appliances 2016-2021 ($ billions)
Exhibit 11: Global IGBT market by UPS 2016-2021 ($ billions)
Exhibit 12: Global IGBT market by others 2016-2021 ($ billions)
Exhibit 13: Global IGBT market by product 2016-2021 (% share of revenue)
Exhibit 14: Global IGBT market by product 2016-2021 ($ billions)
Exhibit 15: Global IGBT market by product 2016-2021 ($ billions)
Exhibit 16: Global IGBT market by product 2016-2021 ($ billions)
Exhibit 17: Global IGBT market by geography 2016-2021 (% share of revenue)
Exhibit 18: Global IGBT market by geography 2016-2021 ($ billions)
Exhibit 19: IGBT market In APAC 2016-2021 ($ billions)
Exhibit 20: IGBT market In EMEA 2016-2021 ($ billions)
Exhibit 21: IGBT market in Americas 2016-2021 ($ billions)
Exhibit 22: Estimation of number of electric vehicles by 2020
Exhibit 23: Impact of drivers
Exhibit 24: Impact of challenges
Exhibit 25: Market share of vendors in global IGBT market 2016
Exhibit 26: Other prominent vendors
Exhibit 27: Key mergers and acquisitions
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FEATURED COMPANIES

  • Fuji Electric
  • Infineon Technologies
  • IXYS Corporation
  • Mitsubishi Corporation
  • ON Semiconductor
  • SEMIKRON
  • MORE
New Report Released: – Global IGBT Market 2017-2021

The author of the report recognizes the following companies as the key players in the global IGBT market: Fuji Electric, Infineon Technologies, Mitsubishi Corporation, and SEMIKRON.

Other Prominent Vendors in the market are: Alpha and Omega Semiconductor, IXYS Corporation, ON Semiconductor, STMicroelectronics, and TOSHIBA.

Commenting on the report, an analyst from the research team said: “The latest trend gaining momentum in the market is Functional consolidation of semiconductor devices. The trend toward digitalization can be seen in industries that push digital control of power to make inverters, drive controls, and other electrical equipment compatible to Industrial Internet. As a result, the integration of other semiconductor components such as sensors, ICs, and microcontrollers with IGBT devices can happen for efficient and easier control.”

According to the report, one of the major drivers for this market is Increase in demand for electric and hybrid electric vehicles. Government initiatives for controlling rising environmental concerns and volatile oil prices are helping accelerate the shift to electric vehicles. It is estimated that EVs and HEVs can reduce the oil consumption by more than one-third by 2020 as electricity is cheap and provides a big cost advantage over gasoline and petroleum. Electric vehicles are more energy-efficient as they convert about 60% of the electrical energy from the grid to power wheels, whereas their counterparts only convert around 20% of the electrical energy to power at the wheels. Electric motors provide quiet, smooth operations and require less maintenance than combustion engines.

Further, the report states that one of the major factors hindering the growth of this market is Wide bandgap (WBG) semiconductor materials. Wide bandgap semiconductors materials allow devices to perform at high voltage, high temperature, and higher switching frequencies. WBG materials such as silicon carbide (SiC) and gallium nitride (GaN) have good thermal conductivity, and these can be exploited in power semiconductor devices. These are considered more efficient than the existing silicon devices because operating at high temperature eliminates the need for outer cooling, and higher switching frequencies result in lesser noise. In addition, these materials can achieve a significant reduction in switching loss. The ampere capacity of SiC is superior to Si. A single 150mm SiC wafer can swap current equal to two 200mm silicon wafers. The use of these materials will significantly improve energy efficiency and will reduce system costs, which cannot be attained while using silicon-based IGBT devices.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
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  • Fuji Electric
  • Infineon Technologies
  • Mitsubishi Corporation
  • SEMIKRON
  • Alpha and Omega Semiconductor
  • IXYS Corporation
  • ON Semiconductor
  • STMicroelectronics
  • TOSHIBA
Note: Product cover images may vary from those shown
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