CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.
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Table of Contents
1. Brief introduction CMOS applications in our daily life2. Basic definitions and equations
3. Electrical measurements (IV, short channel effects, mobility and noise)
4. CMOS Architecture
5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners)
6. High-k and metal gate (Almost all known high-k materials and metal gates)
7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds)
8. Contacts (Silicide formation, contact resistance, parasitic contacts)
9. Integration with photonic components (CMOS with lasers, detectors)
10. Technology roadmap (starting from 50's to unknown future)
11. Authors' final words
