Molecular Beam Epitaxy. Edition No. 2

  • ID: 4454975
  • Book
  • 788 Pages
  • Elsevier Science and Technology
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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.

This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

  • Condenses the fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

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1. Molecular beam epitaxy of transition metal monopnictides

Gavin Richard Bell

2. Migration Enhanced Epitaxy of Low Dimensional Structures

Yoshiji Horikoshi

3. MBE growth of Si-Ge materials and heterostructures

Maksym Myronov

4. SiGeSn MBE

Inga Anita Fischer

5. MBE of Dilute Nitride Optoelectronic Devices

Mircea Guina

6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications

Donat J. As

7. AlGaN nanowires for deep ultraviolet optoelectronics

Zetian Mi

8. plasma-assisted MBE of (Al,Ga)N layers and heterostructures

Valentin Jmerik

9. InAsBi and InAsSbBi materials

Shane Johnson and Arvind Joshua Shalindar

10. Molecular beam epitaxy of GaAsBi and related quaternary alloys

Masahiro Yoshimoto and Kunishige Oe Oe

11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices

Gunther Springholz

12. NIL-based site-control epitaxy

Mircea Guina and Teemu Hakkarainen

13. Droplet epitaxy of nanostructures

Stefano Sanguinetti

14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors

Isaac Hernandez-Calderon

15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications

Aidong Shen

16. ZnO Materials and Devices grown by MBE

Ümit Özgür

17. Epitaxial Systems Combining Oxides and Semiconductors

Gang niu and Bertrand Vilquin

18. Nanostructures of SiGe and ferromagnetic properties

Kang L. Wang

19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices

Samarth .N and Anthony Richardella

20. Challenges and opportunities in MBE growth of 2D crystals: an overview

Huili Grace Xing

21. Molecular beam epitaxy of graphene and hexagonal boron nitride

J. Marcelo J. Lopes and Dominique Vignaud

22. MBE of Transition Metal Dichalcogenides and heterostructures

Christopher Hinkle

23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers

Jiro Nishinaga

24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth

Achim Schöll

25. MBE of II-VI Lasers

Sergey V. Ivanov, Sedova I.V and Sergey Sorokin

26. THz Quantum Cascade Lasers

Aaron Maxwell Andrews

27. GaSb lasers grown on Silicon substrate for telecom application

Eric Tournié

28. GaP/Si based photovoltaic devices grown by MBE

Charles Cornet

29. MBE as a Mass Production Technique

Matt Marek

30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs

Roland Jäger

31. Mass Production of Sensors Grown by MBE

Naohiro Kuze

32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices

Yung-Chung Kao

33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future

Oleg Pchelyakov and Dmitry Pridachin
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Henini, Mohamed
Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
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