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Molecular Beam Epitaxy. From Research to Mass Production. Edition No. 2

  • ID: 4454975
  • Book
  • June 2018
  • Elsevier Science and Technology

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.

This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

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1. Molecular beam epitaxy of transition metal monopnictides 2. Migration Enhanced Epitaxy of Low Dimensional Structures 3. MBE growth of Si-Ge materials and heterostructures 4. SiGeSn MBE 5. MBE of Dilute Nitride Optoelectronic Devices 6. Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications 7. AlGaN nanowires for deep ultraviolet optoelectronics 8. plasma-assisted MBE of (Al,Ga)N layers and heterostructures 9. InAsBi and InAsSbBi materials 10. Molecular beam epitaxy of GaAsBi and related quaternary alloys 11. Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices 12. NIL-based site-control epitaxy 13. Droplet epitaxy of nanostructures 14. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors 15. MBE-grown wide band gap II-VI semiconductors for intersubband device applications 16. ZnO Materials and Devices grown by MBE 17. Epitaxial Systems Combining Oxides and Semiconductors 18. Nanostructures of SiGe and ferromagnetic properties 19. MBE of Hybrid topological/ insulator/ferromagnetic heterostructures and devices 20. Challenges and opportunities in MBE growth of 2D crystals: an overview 21. Molecular beam epitaxy of graphene and hexagonal boron nitride 22. MBE of Transition Metal Dichalcogenides and heterostructures 23. Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers 24. Thin Films of Organic Molecules: Interfaces and Epitaxial Growth 25. MBE of II-VI Lasers 26. THz Quantum Cascade Lasers 27. GaSb lasers grown on Silicon substrate for telecom application 28. GaP/Si based photovoltaic devices grown by MBE 29. MBE as a Mass Production Technique 30. Mass production of optoelectronic devices: LEDs, lasers, VCSELs 31. Mass Production of Sensors Grown by MBE 32. MBE as a Mass Production Enabling Technology for Electronic/Optoelectronic Devices 33. Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future

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Mohamed Henini The University of Nottingham, School of Physics and Astronomy, UK.

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.
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