- Presents the latest research and most comprehensive overview of both standard and novel semiconductors
- Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues
- Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
1. Introduction 2. Electronic Silicon 3. Solar Silicon 4. Germanium 5. Silicon Carbide 6. III-Arsenides 7. III-Phosphides 8. III-Antiomides 9. CdTe and CdZnTe 10. II-sulphides and II-selenides 11. Diamond 12. GaN 13. AIN 14. ZnO 15. Al2O3 16. Ga2O3 17. In2O3 18. SnO2
Roberto Fornari studied Solid State Physics at the University of Parma, Italy. He is presently director of the Leibniz Institute for Crystal Growth (IKZ) in Berlin and holds the Chair of Crystal Growth at the Physics Dept. of the Humboldt University Berlin (joint appointment). Before moving to Germany in 2003 he has worked over twenty years as research scientist at the Institute for Electronic and Magnetic Materials (MASPEC, later IMEM) of the Italian CNR where he led different research projects on growth and thermal processing of bulk III-V semiconductors, HVPE and MOVPE of Nitrides, characterization of semiconductors by electrical and optical techniques. He has authored/co-authored about 170 scientific papers, seven patents and different book chapters. He has edited books and proceedings on crystal growth and semiconductors physics and was subject editor of the Encyclopaedia of Materials published by Pergamon Press in 2001.He is presently member of the editorial board of J.Cryst.Growth, Cryst. Res.Technol. and J. Optoelectron. Advanced. Materials.
He has been Chairman of the IUCr Commission for Crystal Growth and Characterization of Materials from 1999 to 2005 and then member till 2008. From 2001 to 2007 he has been in the Executive Committee of the Intern. Org. for Crystal Growth and he presently serves as Vice-President of this organization.