Global Silicon Carbide (SiC) Power Devices Market 2018-2022

  • ID: 4496911
  • Report
  • Region: Global
  • 157 pages
  • TechNavio
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FEATURED COMPANIES

  • Cree
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • ROHM Semiconductor
  • STMicroelectronics
  • MORE
About Silicon Carbide (SiC) Power Devices

A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.

The analysts forecast Global Silicon Carbide (SiC) Power Devices market to grow at a CAGR of 35.73% from 2018-2022.

Covered in this report
The report covers the present scenario and the growth prospects of the Global Silicon Carbide (SiC) Power Devices market for the period 2018-2022. To calculate the market size, the report presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources.

The market is divided into the following segments based on geography:
  • Americas
  • APAC
  • EMEA
The report, Global Silicon Carbide (SiC) Power Devices Market 2018-2022, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Key vendors
  • Cree
  • Infineon Technologies
  • Mitsubishi Electric
  • ROHM Semiconductor
  • STMicroelectronics
Market drivers
  • Growing demand for power electronics
  • For a full, detailed list, view the full report
Market challenges
  • High SiC material cost
  • For a full, detailed list, view the full report
Market trends
  • Transition toward larger SiC wafer
  • For a full, detailed list, view the full report
Key questions answered in this report
  • What will the market size be in 2022 and what will the growth rate be?
  • What are the key market trends?
  • What is driving this market?
  • What are the challenges to market growth?
  • Who are the key vendors in this market space?
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FEATURED COMPANIES

  • Cree
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • ROHM Semiconductor
  • STMicroelectronics
  • MORE
PART 01: EXECUTIVE SUMMARY

PART 02: SCOPE OF THE REPORT

PART 03: RESEARCH METHODOLOGY

PART 04: MARKET LANDSCAPE

Market ecosystem
Market characteristics
Market segmentation analysis

PART 05: MARKET SIZING

Market definition
Market sizing 2017
Market size and forecast 2017-2022

PART 06: FIVE FORCES ANALYSIS

Bargaining power of buyers
Bargaining power of suppliers
Threat of new entrants
Threat of substitutes
Threat of rivalry
Market condition

PART 07: MARKET SEGMENTATION BY APPLICATION

Segmentation by application
Comparison by application
UPS&PS - Market size and forecast 2017-2022
PV inverters - Market size and forecast 2017-2022
IMDs - Market size and forecast 2017-2022
EV/HEVs - Market size and forecast 2017-2022
Others - Market size and forecast 2017-2022
Market opportunity by application

PART 08: MARKET SEGMENTATION BY PRODUCT

Segmentation by product
Comparison by product
Diodes - Market size and forecast 2017-2022
Transistors - Market size and forecast 2017-2022
Modules - Market size and forecast 2017-2022
Market opportunity by product

PART 09: CUSTOMER LANDSCAPE

PART 10: REGIONAL LANDSCAPE

Geographical segmentation
Regional comparison
APAC - Market size and forecast 2017-2022
EMEA - Market size and forecast 2017-2022
Americas - Market size and forecast 2017-2022
Market opportunity

PART 11: DECISION FRAMEWORK

PART 12: DRIVERS AND CHALLENGES

Market drivers
Market challenges

PART 13: MARKET TRENDS

Transition toward larger SiC wafer
Entrance of multiple suppliers of SiC wafers
Implementation of automation in industries
Use of SiC power devices for extreme operations

PART 14: VENDOR LANDSCAPE

Competitive scenario
Overvie
Landscape disruption

PART 15: VENDOR ANALYSIS0

Vendors covered
Vendor classification
Market positioning of vendors
Cree
Infineon Technologies
Mitsubishi Electric
ON Semiconductor
ROHM Semiconductor
STMicroelectronics
TOSHIBA

PART 16: APPENDIX

List of abbreviations
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FEATURED COMPANIES

  • Cree
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • ROHM Semiconductor
  • STMicroelectronics
  • MORE
New Report Released:-Global Silicon Carbide (SiC) Power Devices Market 2018-2022

The author of the report recognizes the following companies as the key players in the Global Silicon Carbide (SiC) Power Devices market for 2018-2022: Cree, Infineon Technologies, Mitsubishi Electric, ROHM Semiconductor, STMicroelectronics

Commenting on the report, an analyst from the research team said: “One trend in the market is the transition toward larger SiC wafer.”

According to the report, one driver in the market is the growing demand for power electronics.

Further, the report states that one challenge in the market is the high SiC material cost.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
Note: Product cover images may vary from those shown
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  • Cree
  • Infineon Technologies
  • Mitsubishi Electric
  • ON Semiconductor
  • ROHM Semiconductor
  • STMicroelectronics
  • TOSHIBA
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown
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