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III-Nitride Electronic Devices, Vol 102. Semiconductors and Semimetals

  • ID: 4768622
  • Book
  • 422 Pages
  • Elsevier Science and Technology
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III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

  • Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics
  • Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies
  • Written by a panel of academic and industry experts in each field
Note: Product cover images may vary from those shown
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1. Electronic properties of III-nitride materials and basics of III-nitride HEMT Peter Asbeck 2. Epitaxial growth of III-nitride electronic devices Yu Cao 3. III-nitride microwave power transistors Jeong-sun Moon 4. III-nitride millimeter wave transistors Keisuke Shinohara 5. III-nitride lateral transistor power switch Rongming Chu 6. III-nitride vertical devices Tohru Oka 7. Physics-Based Modeling Ujwal Radhakrishna 8. Thermal management in III-nitride HEMT Avijit Bhunia 9. RF/Microwave applications of III-nitride transistor/wireless power transfer Hooman Kazemi 10. Power electronics application of III-nitride transistors Yifeng Wu 11. III-Nitride N-face transistors Man Hoi Wong 12. III-nitride ultra-wide bandgap electronic devices Robert Kaplar 13. III-nitride P-channel transistors Akira Nakajima 14. Epitaxial transition metal nitrides David Meyer 15. Epitaxial lift-off for III-nitride devices Patrick Fay
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