The global high-k and CVD ALD metal precursors market size is projected to reach USD 761.1 million by 2028, registering a CAGR of 6.2% from 2021 to 2028. The trend of miniaturization of semiconductor and electronic devices and the need for enhancing their performance is expected to drive the market growth.
Atomic Layer Deposition (ALD) is the subclass of the Chemical Vapor Deposition (CVD) process, which is used to manufacture thin films. The ALD method is used for depositing multi-component thin films by co-injecting precursors, such as Hf and Si, for forming a single-layer homogenous film used in several applications, such as self-aligned patterning, 3D NAND, and FinFET. The ALD process can create metal as well as dielectric films based on the precursor requirements.
Insulator materials with high dielectric constant (k) play a vital role in modern semiconductor devices and are used for insulating gates from channels in transistors and decoupling filter capacitors to protect microcircuits from unwanted noise. They are also used in the capacitors that store memory bits in DRAM. Moreover, high-k and ALD/CVD metal precursors play a crucial role in Very-Large-Scale Integration (VLSI) technology and scaling of semiconductor devices to 10 nm and beyond nodes. High-k insulators are required to maintain the capacitance of smaller semiconductor devices.
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Atomic Layer Deposition (ALD) is the subclass of the Chemical Vapor Deposition (CVD) process, which is used to manufacture thin films. The ALD method is used for depositing multi-component thin films by co-injecting precursors, such as Hf and Si, for forming a single-layer homogenous film used in several applications, such as self-aligned patterning, 3D NAND, and FinFET. The ALD process can create metal as well as dielectric films based on the precursor requirements.
Insulator materials with high dielectric constant (k) play a vital role in modern semiconductor devices and are used for insulating gates from channels in transistors and decoupling filter capacitors to protect microcircuits from unwanted noise. They are also used in the capacitors that store memory bits in DRAM. Moreover, high-k and ALD/CVD metal precursors play a crucial role in Very-Large-Scale Integration (VLSI) technology and scaling of semiconductor devices to 10 nm and beyond nodes. High-k insulators are required to maintain the capacitance of smaller semiconductor devices.
High-k And CVD ALD Metal Precursors Market Report Highlights
- The interconnect segment accounted for the largest share of the market in 2020 and is expected to reach over USD 343.5 million by 2028
- Asia Pacific dominated the market in 2020 and is expected to register the highest CAGR over the forecast period owing to the high demand for high-k and ALD/CVD metal precursors and rapid growth of the electronics industry in China, India, and other Southeast Asian countries
- Some of the key companies in the market include Air Liquide; Air Products & Chemicals, Inc.; Praxair; Linde; and Dow Chemical
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Frequently Asked Questions about the High-k And CVD ALD Metal Precursors Market
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| Report Attribute | Details |
|---|---|
| No. of Pages | 112 |
| Published | July 2021 |
| Forecast Period | 2021 - 2028 |
| Estimated Market Value ( USD
| USD 498 million |
| Forecasted Market Value ( USD
| USD 761.1 million |
| Compound Annual Growth Rate | 6.2% |
| Regions Covered | Global |
| No. of Companies Mentioned | 12 |
Table of Contents
Chapter 1. Methodology & Scope
Chapter 3. High-k and CVD ALD Metal Precursors Market Variables, Trends, and Scope
Chapter 4. High-k and CVD ALD Metal Precursors Market: Technology Outlook
Chapter 5. High-k and CVD ALD Metal Precursors Market: Regional Outlook
Chapter 6. Competitive Landscape
List of Tables
List of Figures
Companies Mentioned
- Air Liquide
- Adeka Corporation
- Air Product & Chemicals, Inc.
- Colnatec
- Dow Chemical
- Linde
- Merck KGAA
- Nanmat Technology Co. Ltd.
- Praxair
- Samsung
- Strem Chemicals, Inc.
- Tri Chemical Laboratories Inc.
Methodology
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